Abstract
Dual-band HgCdTe IRFPAs detectors are one of the most important developing frontiers for 3rd generation IRFPAs detectors. A barrier structure has been implemented in the dual-band HgCdTe detectors to restrain the electrical cross-talk between two layers with different compositions. Moreover, we now reveal another benefit of this barrier structure. This barrier can relieve the critical demands in photo-lithography of the implantation process, which shows great advantages as the dimension of a single element in advanced dual-band IRFPAs detectors is becoming less than 30 μm. When the implantation pattern migrates, the profile of the cavity in the dual-band structure is exposed under implantation. An n-type connection between LW layer and MW layer will be induced. With a modified barrier, the dark current of the MW contact can be reduced to the same order as those with precise implantation.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 15.
Guest Edited by Julien Javaloyes, Weida Hu, Slawek Sujecki and Yuh-Renn Wu.
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Chen, Y., Ye, Z., Zhang, P. et al. A barrier structure optimization for widening processing window in dual-band HgCdTe IRFPAs detectors. Opt Quant Electron 48, 294 (2016). https://doi.org/10.1007/s11082-015-0359-z
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DOI: https://doi.org/10.1007/s11082-015-0359-z