Impurity photovoltaic effect in silicon solar cells doped with two impurities
In this work, a numerical study has been carried out to investigate the impurity photovoltaic (IPV) effect for silicon solar cells doped with two impurities (indium and thallium). It is found that the conversion efficiency \(\eta \) of the IPV solar cell doped with two impurities can improve by 2.21 % absolute, which is greater than that of the IPV solar cell doped with indium (\(\Delta \eta =1.63\,\%\)), but less than that of the one doped with thallium (\(\Delta \eta =2.69\,\%\)). It is concluded that introducing two IPV impurities may not be a good selection for implementing the IPV effect since one impurity with poorer IPV effect can absorb some sub-bandgap photons while contributing fewer currents. The location of impurity energy level is critical to the IPV cell performance. For an acceptor-type IPV impurity, the optimized location of the IPV impurity energy level locates at 0.20–0.26 eV above the valence band edge. Our results may help to make better use of the IPV effect for improving solar cell efficiency.
KeywordsImpurity photovoltaic effect Silicon solar cell Conversion efficiency Indium Thallium
We acknowledge the free use of the SCAPS program developed by Prof. M. Burgelman’s group at the ELIS of the University of Gent, Belgium. We are very grateful to Prof. M. Burgelman for his helpful discussion about the IPV solar cell. This work was supported by the National Natural Science Foundation of China (Grant Nos. 61176062, 61306084, 51361022), the Priority Academic Program Development of Jiangsu Higher Education Institutions, the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20113601120006), the Natural Science Foundation of Jiangxi Province of China (Grant No. 20122BAB202002) and the Science and Technology Project of Education Department of Jiangxi Province (Grant No. GJJ13010).
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