Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure
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In this paper we present a physical modeling and simulation result of an optical memory cell based on a semiconductor quantum-dot in quantum-well hybrid structure. The physical modeling and simulation were done in Crosslight Apsys software which offers advanced models for photoelectric devices. We have optimized the scan conditions, iterative algorithm and other simulation parameters in order to obtain a solution. The calculated I–V and C–V curves agree with the experimental results and demonstrate that the cell can be used for photon storage.
KeywordsPhoton storage Quantum-dots Quantum-well APSYS Physical model
This work was supported by National Scientific Research Plan (2006CB932802, 2011CB932903) and State Scientific and Technological Commission of Shanghai (No. 078014194, 118014546).
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