Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission
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Optical gain performance of InP based “W” structure with InGaAs(N)/GaAsSb type-II quantum wells are investigated theoretically. The band structure was calculated by using k.p model, taking into account the conduction band mixing with N resonant band, valence band mixing, as well as strain effect. Our studies show that these type-II quantum wells are suitable for mid-infrared (2–4 μm) operation at room temperature.
KeywordsMid-wavelength infrared (MWIR) Dilute nitride InGaAsN GaAsSb Type-II quantum well Optical gain
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- Chang C.-S., Chuang S.L.: Modeling of strained quantum-well lasers with spin-orbit coupling. IEEE J. Sel. Top. Quantum Electron. I(2), 218–229 (1995)Google Scholar
- Hu J., Xu J.A., Stotz H., Watkins S.P., Curzon A.E., Thewalt M.L.W., Matine N., Bolognesi C.R.: Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 73, 2781–2799 (1998)CrossRefGoogle Scholar