Optical and Quantum Electronics

, Volume 45, Issue 2, pp 127–134 | Cite as

Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission



Optical gain performance of InP based “W” structure with InGaAs(N)/GaAsSb type-II quantum wells are investigated theoretically. The band structure was calculated by using k.p model, taking into account the conduction band mixing with N resonant band, valence band mixing, as well as strain effect. Our studies show that these type-II quantum wells are suitable for mid-infrared (2–4 μm) operation at room temperature.


Mid-wavelength infrared (MWIR) Dilute nitride InGaAsN GaAsSb Type-II quantum well Optical gain 


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© Springer Science+Business Media, LLC. 2012

Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringUniversity of VirginiaCharlottesvilleUSA

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