Abstract
Approaches towards Si-based lasers are discussed using lattice-matched group-IV heterostructures that can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Several strain-free designs are presented that include Ge/GeSiSn quantum cascade structure, GeSn/GeSiSn double heterostructure, and GeSn/GeSiSn multiple quantum wells.
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Sun, G. Towards Si-based electrically injected group-IV lasers. Opt Quant Electron 44, 563–573 (2012). https://doi.org/10.1007/s11082-012-9573-0
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DOI: https://doi.org/10.1007/s11082-012-9573-0