Abstract
Experimental results of a high-speed silicon optical modulator based on carrier depletion in a pipin diode and Germanium photodetectors are presented. 10 Gbit/s data transmission is obtained for both optoelectronic devices, with for the optical modulator an extinction ratio (ER) higher than 8 dB and insertion loss (IL) lower than 6 dB and for Ge photodetector, a zero-bias operating at 10 Gbit/s. Finally, a 10 Gbit/s optical link combining Si modulator and Ge photodetector is demonstrated.
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Ziebell, M., Marris-Morini, D., Rasigade, G. et al. 10 Gbit/s Silicon modulator and germanium detector chip-to-chip optical link. Opt Quant Electron 44, 581–587 (2012). https://doi.org/10.1007/s11082-012-9572-1
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DOI: https://doi.org/10.1007/s11082-012-9572-1