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Fast light-emitting silicon-germanium nanostructures for optical interconnects

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Abstract

Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3–1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.

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Authors and Affiliations

  1. Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada

    D. J. Lockwood

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, New York, NJ, 07102, USA

    L. Tsybeskov

Authors
  1. D. J. Lockwood
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  2. L. Tsybeskov
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Correspondence to D. J. Lockwood.

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Lockwood, D.J., Tsybeskov, L. Fast light-emitting silicon-germanium nanostructures for optical interconnects. Opt Quant Electron 44, 505–512 (2012). https://doi.org/10.1007/s11082-012-9549-0

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  • DOI: https://doi.org/10.1007/s11082-012-9549-0

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