Optical and Quantum Electronics

, Volume 41, Issue 11–13, pp 883–893 | Cite as

Light-emitting diodes for space applications

  • W. Lu
  • T. Zhang
  • S. M. He
  • B. Zhang
  • N. Li
  • S. S. Liu


The use of Light Emitting Diode (LED) devices for illumination inside space cabin and outside have been well exploited in the past few years; these include, for example, the in-cabin application on the bio-science satellite in 2007 and the out-of cabin application on spacecraft in 2008 to shine on the first step in space of Chinese astronaut. The simulation of the optical properties has been performed to optimize the brightness of the LED lamp. The thermal property of assembled LED lamp has been experimentally characterized and used in combination with the numerical simulation to improve the precision of determining the active layer temperature of the LEDs packed in the lamp. The measurement precision of the LED active layer temperature is improved to a value better than 1 K.


Light-emitting diode (LED) Active layer temperature Space application 


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  1. Cho J., Sone C., Park Y., Yoon E.: Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift. Phys. Stat. Sol. (a) 202(9), 1869–1873 (2005)CrossRefADSGoogle Scholar
  2. Gu Y., Narendran N.: Third international conference on solid state lighting. Proc. SPIE 5187, 107–114 (2004)CrossRefADSGoogle Scholar
  3. Hwang W.J., Lee T.H., Kim L., Shin M.W.: High-power GaN light-emitting diodes with patterned copper substrates by electroplating. Phys. Stat. Sol. (c) 1(10), 2429–2432 (2004)CrossRefGoogle Scholar
  4. Mukai T., Morita D., Yamamoto M., Akaishi K., Matoba K., Yasutomo K., Kasai Y., Sano M., Nagahama S.-I.: Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips. Phys. Stat. Sol. (c) 3(6), 2211–2214 (2006)CrossRefGoogle Scholar
  5. Nakamura S.: The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science 281, 976 (1998)CrossRefGoogle Scholar
  6. Shen S.C.: Comparison and competition between MCT and QW structure material for use in IR detectors. Microelectronics J. 25, 713–739 (1994)CrossRefGoogle Scholar
  7. Xi Y., Schuberta E.F.: Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Appl. Phys. Lett. 85(12), 2163–2165 (2004)CrossRefADSGoogle Scholar
  8. Xia C.S., Hu W.D., Wang C., Li Z.F., Chen X.S., Lu W., Simon Li Z.M., Li Z.Q.: Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects. Opt. Quantum. Electron. 38, 1077–1089 (2006)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC. 2010

Authors and Affiliations

  1. 1.National Lab for Infrared PhysicsShanghai Institute of Technical Physics Chinese Academy of SciencesShanghaiChina

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