Design issues of 1.55 µm emitting GaInNAs quantum dots
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We present a theoretical study of the optical properties of GaInNAs quantum dot (QD) structures, emitting at 1.55 µm wavelength. The theoretical model is based on a 10 × 10 k · p band-anti-crossing Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We have investigated the influence of the nitrogen to the conduction band mixing, and piezoelectric field on the ground state optical matrix element. For QDs grown on GaAs substrate with a reduced amount of indium and an increased amount of nitrogen in the QD the e x polarized optical matrix element becomes on the average larger and less sensitive to the variation of both the QD shape and size than is the case of an InNAs QD. For the QD grown on InP substrate the dominant optical dipole matrix element is of the e z light polarization. Our results identify the specific In and N content in the QDs required for optimal long-wavelength emission on both substrates.
KeywordsQuantum dots Dilute nitrides Telecommunications Semiconductors
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