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3D simulation of InGaN/GaN micro-ring light-emitting diodes

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Abstract

We employed the APSYS software to perform 3D electrical and ray-tracing simulations on micro-ring light-emitting diodes (LEDs) to verify previous experimental findings that they have higher extraction efficiency than micro-disk and broad area LEDs. 3D ray-tracing indicates the importance of inter-ring optical interactions. Furthermore we found that the higher light extraction efficiency is at the expense of reduced internal quantum efficiency (IQE) as injection current is increased.

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Authors and Affiliations

  1. Crosslight Software China, 12A, Bld. 1, 318 Chongqing Bei Road, Shanghai, 200003, China

    Yang Sheng

  2. Crosslight Software Inc., 206-3993 Henning Drive, Burnaby, BC, V5C 6P7, Canada

    Oleksiy Shmatov & Z. M. Simon Li

Authors
  1. Yang Sheng
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  2. Oleksiy Shmatov
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  3. Z. M. Simon Li
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Correspondence to Yang Sheng.

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Sheng, Y., Shmatov, O. & Simon Li, Z.M. 3D simulation of InGaN/GaN micro-ring light-emitting diodes. Opt Quant Electron 39, 597–602 (2007). https://doi.org/10.1007/s11082-007-9112-6

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  • DOI: https://doi.org/10.1007/s11082-007-9112-6

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