Plasma-assisted nitrogen doping of VACNTs for efficiently enhancing the supercapacitor performance
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Nitrogen doping of vertically aligned carbon nanotubes (VACNTs) using plasma-enhanced chemical vapour deposition has been investigated to improve the supercapacitance performance of CNTs. Incorporating electrochemical measurements on the open-ended nitrogen-doped CNTs, showed the achievement of 6 times improvement in the capacitance value. For nitrogen-doped CNTs on silicon substrate, specific capacitance of 60 F g−1 was obtained in 0.5 M KCl solution, with capacity retention ratio above 90 % after cycled at 0.1 A g−1 for 5000 cycles. Using this sample, a symmetric supercapacitance was fabricated which showed the power density of 37.5 kW kg−1. The facile fabrication approach and its excellent capacitance improvement, propose it as an efficient technique for enhancing the supercapacitance performance of the carbon-based electrodes.
KeywordsNitrogen doping PECVD Open-ended CNT Supercapacitor Energy storage
The authors would like to thank Professor Mohajerzadeh and Mr. Mehdi Akbari for their technical assistance. This work has been partially supported by Iran National Science Foundation (INSF).