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Influence of sulphide precursor on crystal phase of ternary I–III–VI2 semiconductors

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Abstract

Samples of AgInS2 and CuInS2 nanoparticles were synthesized by hot-injection method at 270 °C using 1-dodecanethiol (DT) and elemental sulphur (S) as sulphide precursors, and oleylamine as reaction medium and surfactant. Composition, crystal structure, and particle size of obtained materials were tracked by XRD and TEM/HRTEM measurements. It was shown that, due to its dual role as sulphur source and surfactant, DT drastically slows formation of desired material. Samples obtained with DT even after 4 h of reaction have traces of intermediary compound (β-In2S3), whereas in samples synthesized with elemental S these traces are less pronounced. The growth mechanism and influence of each reaction step are discussed in detail.

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Acknowledgments

Financial support for this study was granted by the Ministry of Education and Science of the Republic of Serbia (Projects: III45020 and OI172056). This research was also supported by COST Actions CM1101 and MP1106.

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Authors and Affiliations

  1. Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11001, Belgrade, Serbia

    Milica V. Beloš, Nadica D. Abazović, Jadranka Kuljanin Jakovljević, Ivana Janković, Miodrag Mitrić & Mirjana I. Čomor

  2. Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, 501 E. Saint Joseph St., Rapid City, SD, 57701, USA

    Scott P. Ahrenkiel

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  1. Milica V. Beloš
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  2. Nadica D. Abazović
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  5. Scott P. Ahrenkiel
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  6. Miodrag Mitrić
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Correspondence to Nadica D. Abazović.

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Beloš, M.V., Abazović, N.D., Jakovljević, J.K. et al. Influence of sulphide precursor on crystal phase of ternary I–III–VI2 semiconductors. J Nanopart Res 15, 2148 (2013). https://doi.org/10.1007/s11051-013-2148-6

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