Two-dimensional Zn k In2O k+3 nanostructures: synthesis, growth mechanism, self-assembly, and luminescence
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Indium–zinc oxide nanostructures, such as nanosheets, nanobelts, and wires formed by oriented stacks of nanoplates have been grown by a controlled thermal evaporation method without the use of a foreign catalyst. Surface features in the stacked hexagonal nanoplates suggest a dislocation-driven growth mechanism for these structures. A growth model for these stacks is proposed based on changes in velocity growth rate between the outer and the inner part of the plates. Zn incorporation has been investigated by means of energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and selected area electron diffraction. The formation of Zn k In2O k+3 ternary compounds has been demonstrated. Cathodoluminescence emission and its correlation with the morphology of the structures and Zn content have been studied.
KeywordsIndium–zinc oxide Nanosheets Transparent conducting oxides Luminescence and surface electronic properties Semiconductor nanostructure
This work has been supported by Ministerio de Economía y Competitividad (Projects MAT 2012-31959, and Consolider CSD 2009-00013). J. Bartolomé acknowledges the financial support from Universidad Complutense de Madrid.