Ge quantum dot lattices in Al2O3 multilayers
- 291 Downloads
In this article, we show how to produce materials consisting of regularly ordered Ge quantum dot lattices in an amorphous alumina matrix with a controllable Ge quantum dot size, shape, spacing, crystalline structure, and degree of regularity in their ordering. The production of such materials is achievable already at room temperature by magnetron sputtering deposition of a (Ge + Al2O3)/Al2O3 multilayer. The materials show photoluminescence in the visible and ultraviolet light range, a size-dependent blue shift of the photoluminescence peak and an enhancement of its intensity by size reduction, indicating the quantum dot origin of the photoluminescence. The materials also exhibit excellent mechanical properties due to the alumina matrix. Their internal structure is shown to be highly resistive to irradiation with energetic particles for a large range of the irradiation parameters.
KeywordsGe quantum dots GISAXS Photoluminescence Self-assembly Al2O3
This work has been supported by the Ministry of Science Education and Sports, Croatia (project numbers 0982886-2895, 098-0982886-2859, 1191005-2876, 0982934-2744), and by the European Community as an Integrating Activity [Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT)] under EC contract no. 227012. The authors are grateful to Medeja Gec for preparing samples for STEM measurements and Aleksa Pavlešin for the help in the sample preparation. We thank the HZDR ROBL beam line at the ESRF, Grenoble, for providing us beam time to study in situ the growth process. V. H. acknowledges the support of the Czech Science foundation (project P204/11/0785) and G. D. acknowledges the support of the Slovenian Research Agency (P2-0084).
- Buljan M, Bogdanović-Radović I, Karlušić M, Desnica UV, Radić N, Skukan N, Dražić G, Ivanda M, Matej Z, Valeš V, Grenzer J, Cornelius T, Metzger HT, Holý V (2010c) Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation: modeling and structural characterization. Phys Rev B 81:085321CrossRefGoogle Scholar
- Kanjilal A, Lundsgaard Hansen J, Gaiduk P, Nylandsted Larsen A, Cherkashin N, Claverie A, Normand P, Kapelanakis E, Skarlatos D, Tsoukalas D (2003) Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy. Appl Phys Lett 82:1212CrossRefGoogle Scholar
- Martin-Sanchez J, Marques L, Vieira EMF, Doan QT, Marchand A, El Hdiy A, Rolo AG, Pinto SRC, Ramos MMD, Chahboun A, Gomes MJM (2012) Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties. J Nanopart Res 14:843CrossRefGoogle Scholar
- Pinto SRC, Buljan M, Marques ML, Martín-Sánchez M, Conde O, Chahboun A, Ramos AR, Barradas NP, Alves E, Bernstorff S, Grenzer J, Mücklich A, Ramos MMD, Gomes MJM (2012) Influence of annealing conditions on formation of regular lattices of voids and Ge quantum dots in amorphous alumina matrix. Nanotechnology 23:405605CrossRefGoogle Scholar