Tailoring the electrical properties of tellurium nanowires via surface charge transfer doping
We presented an attempt to modulate the electrical property of tellurium nanowires (TeNWs) via a surface charge transfer doping method. The TeNWs with length of several tens of micrometers and diameters of 20–50 nm were prepared by a simple hydrothermal method at 160 °C for 20 h. High-resolution transmission electron microscope image combined with selected area electron diffraction pattern shows the single-crystal nature and a growth direction along . Electrical analysis of the individual TeNW-based field effect transistor before and after surface coating reveals that MoO3 and CuPc thin layer coating can greatly enhance both electrical conductivities and hole concentrations. Such a surface hole injection effect, according to the band energy alignment, can be attributed to the huge differences in work functions between TeNW and MoO3/CuPc. Furthermore, the influence of the deposited layer on carrier mobility is strikingly different, which is believed to be due to the discrepancy in surface scattering upon surface coating. The results from this study provide an effective alternative for doping other semiconductor nanostructures.
KeywordsTellurium nanowires Charge transfer doping Electrical property Hole injection
The authors thank Dr. Hong-Bing Yao at University of Science and Technology of China for generous help and constructive discussion. This work was supported by the National Natural Science Foundation of China (Nos. 60806028, 61106010, 21101051, and 20901021), the Program for New Century Excellent Talents in University of the Chinese Ministry of Education (NCET-08-0764), the Major Research Plan of the National Natural Science Foundation of China (No. 91027021), and the Fundamental Research Funds for the Central Universities.
- Gillessen K, Schairer W (1987) Light emitting diodes: an introduction. Prentice Hall International, LondonGoogle Scholar
- Kudrjavcev A (1974) The chemistry and technology of selenium and tellurium. Collet’s, LondonGoogle Scholar
- Sze S, Ng K (2007) Physics of semiconductor devices. Wiley-Blackwell, Boston, MAGoogle Scholar