Journal of Nanoparticle Research

, Volume 13, Issue 10, pp 4821–4828 | Cite as

Low-temperature formation of nanocrystalline SiC particles and composite from three-layer Si/C/Si film for the novel enhanced white photoluminescence

  • C. K. Chung
  • T. Y. Chen
  • C. W. Lai
Research Paper


In this article, nanocrystalline silicon carbide (nc-SiC) and composite have been synthesized at an annealing temperature as low as 750 °C through the thermal reaction of Si/C/Si multilayers deposited on the Si(100) substrate by ultra-high-vacuum ion beam sputtering (UHV IBS) compared with the conventional thermal formation of crystalline SiC (c-SiC) nanostructures above 1,000 °C. The evolution of microstructure and reaction between C and Si was examined by Raman spectroscopy, Fourier transform infrared spectrometer (FTIR), high-resolution field emission scanning electron microscope (HR-FESEM), and high-resolution transmission electron microscopy. The c-SiC nanoparticles (np-SiC) of around 20–120 nm in diameter appeared on the top and bottom of the three-layer film with a particle density of around 2.63 × 1010 cm−2 after 750 °C annealing. The composite of nc-SiC and Si nanocrystals (nc-Si) size below 5 nm embedded in an amorphous SiC (a-SiC) matrix appeared at the interface between the Si and C layers. Efficient thermal energy is the driving force for the formation of nc-SiC and composite through interdiffusion between C and Si. The broad visible photoluminescence (PL) spectrum of 350–750 nm can be obtained from the annealed composite Si/C/Si multilayer and deconvoluted into four bands of blue (~430 nm), green (~500 nm), green–yellow (~550 nm), and orange (~640 nm) emission, corresponding to the emission origins from nc-SiC, sp2 carbon clusters, np-SiC, and nc-Si, respectively.


nc-SiC Nanoparticles Composite RTA Photoluminescence Nanolayers 



This study is partially sponsored by the National Science Council under grant No. NSC 96-2628-E-006-080-MY3. The authors would like to thank the Center for Micro/Nano Science and Technology (CMNST) in the National Cheng Kung University, Tainan, Taiwan, for the access of analysis equipments and technical support.


  1. Anders S, Anders A, Brown IG, Wei B, Komvopoulos K, Ager JW III, Yu KM (1994) Effect of vacuum arc deposition parameters on the properties of amorphous carbon thin films. Surf Coat Technol 68–69:388–393CrossRefGoogle Scholar
  2. Beeman D, Sliverman J, Lynds R, Anderson MR (1984) Modeling studies of amorphous carbon. Phys Rev B 30:870–875CrossRefGoogle Scholar
  3. Callister WD Jr (2005) Fundamentals of materials science and engineering, 2nd edn. Wiley, Hoboken, pp 420–427Google Scholar
  4. Cao L, Jiang H, Song H, Li Z, Miao G (2010) Thermal CVD synthesis and photoluminescence of SiC/SiO2 core–shell structure nanoparticles. J Alloy Compd 489:562–565CrossRefGoogle Scholar
  5. Cen ZH, Chen TP, Liu Z, Liu Y, Ding L, Yang M, Wong JI, Yu SF, Goh WP (2010) Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film. Opt Express 18:20439–20444CrossRefGoogle Scholar
  6. Chu KT, Jin ZQ, Chakka VM, Liu JP (2005) Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites. J Phys D Appl Phys 38:4009–4014CrossRefGoogle Scholar
  7. Chung CK, Wu BH (2006) Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering. Nanotechnology 17:3129–3133CrossRefGoogle Scholar
  8. Chung CK, Peng CC, Wu BH, Chen TS (2007) Residual stress and hardness behaviors of the two-layer C/Si films. Surf Coat Technol 202:1149–1153CrossRefGoogle Scholar
  9. Chung CK, Lai CW, Peng CC, Wu BH (2008) Formation of SiC nanoparticles of two-layer C/Si films on the Si substrate using thermal annealing. Thin Solid Films 517:1219–1224CrossRefGoogle Scholar
  10. Coscia U, Ambrosone G, Basa DK (2008) Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix. J Appl Phys 103:063507CrossRefGoogle Scholar
  11. Guo YP, Zheng JC, Wee ATS, Huan CHA, Li K, Pan JS, Feng ZC, Chua SJ (2001) Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix. Chem Phys Lett 339:319–322CrossRefGoogle Scholar
  12. Huh C, Kim KH, Kim BK, Kim W, Ko H, Choi CJ, Sung GY (2010) Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures. Adv Mater 22:5058–5062CrossRefGoogle Scholar
  13. Kailer A, Nickel KG, Gogotsi YG (1999) Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations. J Raman Spectrosc 30:939–946CrossRefGoogle Scholar
  14. Kametani K, Sudoh K, Iwasaki H (2004) Growth of SiC nanodots on Si(111) by exposure to ferrocene and annealing studied by scanning tunneling microscopy. Thin Solid Films 467:50–53CrossRefGoogle Scholar
  15. Kikuchi N, Kusano E, Tanaka T, Kinbara A, Nanto H (2002) Preparation of amorphous Si1 − xCx (0 ≤ x ≤ 1) films by alternate deposition of Si and C thin layers using a dual magnetron sputtering source. Surf Coat Technol 149:76–81CrossRefGoogle Scholar
  16. Kim KJ, Lee S, Lee JH, Roh MH, Lim KY, Kim YW (2009) Structural and optical characteristics of crystalline silicon carbide nanoparticles synthesized by carbothermal reduction. J Am Ceram Soc 92:424–428CrossRefGoogle Scholar
  17. Lei TM, Chen ZM, Ma JP, Yu MB (1997) SiC crystallization in carbonized Si(111) layers. Chin J Semicond 18:317Google Scholar
  18. Liu J, Vohra YK (1994) Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: a comparison with silicon and diamond. Phys Rev Lett 27:4105–4108CrossRefGoogle Scholar
  19. Marconi A, Anopchenko A, Wang A, Pucker G, Bellutti P, Pavesi L (2009) High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling. Appl Phys Lett 94:221110CrossRefGoogle Scholar
  20. Mejregany M, Zorman CA (1999) SiC MEMS: opportunities and challenges for applications in harsh environments. Thin Solid Films 355:518–524CrossRefGoogle Scholar
  21. Richter A, Scheibe HJ, Pompe W, Brzezinka KW, Muhling I (1986) About the structure and bonding of laser generated carbon films by Raman and electron energy loss spectroscopy. J Noncryst Solids 88:131–144CrossRefGoogle Scholar
  22. Robertson J (2003) Improving the properties of diamond-like carbon. Diam Relat Mater 12:79–84CrossRefGoogle Scholar
  23. Seo JY, Yoon SY, Niihara K, Kim KH (2002) Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition. Thin Solid Films 406:138–144CrossRefGoogle Scholar
  24. Wang J, Suendo V, Abramov A, Yu L, Cabarrocas PRi (2010) Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism. Appl Phys Lett 97:221113CrossRefGoogle Scholar
  25. Xu M, Ng VM, Huang SY, Long JD, Xu S (2005) Growth of SiC nanoparticle films by means of RF magnetron sputtering. IEEE Trans Plasma Sci 33:242–243CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2011

Authors and Affiliations

  1. 1.Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, and Advanced Optoelectronic Technology CenterNational Cheng Kung UniversityTainanTaiwan, Republic of China

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