Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation
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We synthesized Si nanoparticles by pulsed nanosecond-laser ablation. We applied a positive voltage bias during laser irradiation and effectively reduced size distribution. Scanning electron micrographs of samples showed the nanoparticles to be highly non-agglomerated. Si nanoparticles have the average diameter of 4–5 nm, the geometrical standard deviation of 1.35, and the density of 1.6 × 1012/cm2. A MOS device showed excellent charge trap behavior with a flat-band voltage shift over 7 V, which can be applied for memory device applications.
KeywordsSi nanoparticle Pulsed laser ablation Size distribution HV bias Nanomanufacturing
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