A method for modeling the 2T937 transistor is described. Calculations of its static and frequency characteristics are presented and the error in the model is assessed. Optimized parameters of a Gummel–Poon model are taken as the basis for modeling the transistor. It is shown that the model developed here can be used in computer aided design systems as a component base for the development of transistor devices.
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Translated from Izmeritel’naya Tekhnika, No. 8, pp. 65–68, August, 2018.
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Khvalin, A.L. Modeling 2T937 Bipolar Transistors Based on Experimental Static and Frequency Characteristics. Meas Tech 61, 831–835 (2018). https://doi.org/10.1007/s11018-018-1510-6
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DOI: https://doi.org/10.1007/s11018-018-1510-6