Advertisement

Measurement Techniques

, Volume 58, Issue 2, pp 167–172 | Cite as

1/F α-Type Noise in Lead Sulfide-Based Photosensitive Elements

  • B. N. Miroshnikov
  • I. N. Miroshnikova
  • H. S. H. Mohamed
  • A. I. Popov
Article
  • 41 Downloads

The results of studies of the spectral power density of noise and transmission electron microscopy of lead sulfide–based photosensitive structures are analyzed from the point of view of detecting possible noise-forming mechanisms.

Keywords

photosensitive structures lead sulfide spectral power density of noise scanning electron microscopy 

Notes

The present study has been carried out with the support of the Russian Foundation for Basic Research (Grant No. 12-07-00706a).

References

  1. 1.
    W. W. Scanlon, “Recent advances in optical and electronic properties of PbS, PbSe, PbTe, and their alloys,” J. Phys. Chem. Solids, 8, No. 2, 423–428 (1959).CrossRefADSGoogle Scholar
  2. 2.
    R. Hudson, Infrared Systems [Russian translation], Mir, Moscow (1972).Google Scholar
  3. 3.
    P. K. Nair et al., “Prospects of chemically deposited metal chalcogenide thin films for solar control applications,” J. Appl. Phys., 22, 829–832 (1989).Google Scholar
  4. 4.
    H. Zogg et al., “Photovoltaic IV–VI on Si infrared sensor arrays for thermal imaging,” Opt. Eng., 34, 1964–1969 (1995).CrossRefADSGoogle Scholar
  5. 5.
    H. Elabd and A. J. Steckl, “Structural and compositional properties of the PbS–Si heterojunctions,” J. Electrochem. Soc., 137, 2697–2699 (1990).CrossRefGoogle Scholar
  6. 6.
    A. Watt et al., “Carrier transport in PbS nanocrystal conducting polymer composites,” J. Appl. Phys., 87, 1–3 (2005).Google Scholar
  7. 7.
    S. I. Sadovnikov, N. S. Kozhevnikova, and A. I. Gusev, “Optical properties of nanostructurized films of lead sulfide with D03-type cubic structure,” Fiz. Tekhn. Poluprovodn., 45, Iss. 12, 1621–1632 (2011).Google Scholar
  8. 8.
    I. N. Miroshnikova et al., “Spectral and noise characteristics of photoresistors based on lead sulfide,” Vestnik Mosk. Energ. Inst, No. 4, 57–62 (2010).Google Scholar
  9. 9.
    S. A. Sokolik, A. M. Gulyaev, and I.N. Miroshnikova, “Improved setup for studying the low-frequency noise in semiconductor devices and structures,” Izmer. Tekhn., No. 1, 61–65 (1997); Measur. Techn., 40, No. 1, 85–90 (1997).Google Scholar
  10. 10.
    I. N. Miroshnikova, A. L. Komissarov, and B. N. Miroshnikov, “Noise of PbS-based semiconductor photoresistors,” Izmer. Tekhn., No. 6, 18–21 (2010); Measur. Techn., 53, No. 6, 620–625 (2010).Google Scholar
  11. 11.
    G. A. Kitaev et al., “Thermodynamic evaluation of conditions of sedimentation of thiocarbamide from aqueous solutions on metal sulfides,” Kinetics and Mechanism of Formation of Solid Phase, Sverdlovsk (1968), pp. 113–117.Google Scholar
  12. 12.
    V. G. Butkevich, Ye. R. Globus, and L. N. Zalevskaya, “Control of the characteristics of chemically deposited films of lead sulfide,” Priklad. Fiz., No. 2, 52–56 (1999).Google Scholar
  13. 13.
    L. N. Neustroev and V. V. Osipov, “Physical processes in photosensitive polycrystalline films of lead chalcogenides,” Microelektronika, 17, No. 5, 399–416 (1988).Google Scholar
  14. 14.
    V. N. Vertsner, N. A. Kel’ner, and A. M. Solov’ev, “Formation of oxides in lead sulfide layers and photoresistances,” Kristallografiya, 2, Iss. 4, 497–502 (1957).Google Scholar

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • B. N. Miroshnikov
    • 1
  • I. N. Miroshnikova
    • 1
  • H. S. H. Mohamed
    • 1
    • 2
  • A. I. Popov
    • 1
  1. 1.National Research University – Moscow Power Engineering Institute (MPEI)MoscowRussia
  2. 2.Fayoum Universityal FayoumEgypt

Personalised recommendations