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Fluorophenyl derivatives of elements II-VI groups

Phase transitions thermodynamics and growing films by CVD

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Abstract

The enthalpies and temperatures of melting of RSi(CH3)3, R4Si, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg (R=C6F5) were obtained by scanning calorimetry measurements. The pressure of the saturated and unsaturated vapors of RSi(CH3)3, R2Si(CH3)2, R4Si, R3Ga, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg has been measured by the static method with a membrane-gauge manometer. It was established that all investigated substances proceeded to vapor as monomers. Equations approximating the dependences of saturated vapor pressures on temperature and the enthalpies and entropies of vaporization were obtained. Grafite films with silicon intercalated up to 25 at.% were grown by CVD using R4Si as a precursor. These films showed semiconductor properties in the temperature interval 80–300 K.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, Ac. Lavrentyev Prospect 3, 630090, Novosibirsk, Russia

    L. N. Zelenina, T. P. Chusova, Yu. G. Stenin & V. V. Bakovets

  2. Novosibirsk State University, Pirogova street 2, 630090, Novosibirsk, Russia

    L. N. Zelenina

Authors
  1. L. N. Zelenina
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  2. T. P. Chusova
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  3. Yu. G. Stenin
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  4. V. V. Bakovets
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Correspondence to L. N. Zelenina.

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Zelenina, L.N., Chusova, T.P., Stenin, Y.G. et al. Fluorophenyl derivatives of elements II-VI groups. J Therm Anal Calorim 92, 723–727 (2008). https://doi.org/10.1007/s10973-008-9026-y

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  • DOI: https://doi.org/10.1007/s10973-008-9026-y

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