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Journal of Sol-Gel Science and Technology

, Volume 85, Issue 3, pp 703–711 | Cite as

Novel adamantane-based periodic mesoporous organosilica film with ultralow dielectric constant and high mechanical strength

  • Guoping Zhang
  • Jiawei Zhang
  • Fangfang Niu
  • Fan Zhang
  • Songfang Zhao
  • Mingliang Wang
  • Yongju Gao
  • Rong Sun
  • Chingping Wong
Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications
  • 111 Downloads

Abstract

In this work, a novel bridged organosilane precursor, adamantane-bridged organosilane (ADBO), was synthesized successfully which was employed to prepare adamantane-based (ADH-based) periodic mesoporous organosilica (PMO) thin film in the presence of porogen and acid catalyst via evaporation-induced self-assembly (EISA) after spin-coating procedure. The resultant ADH-based PMO thin films were characterized by FTIR, NMR, TEM, and small-angle XRD. The ADH-based PMO thin film with weight ratio of porogen to ADBO (0.75:1) possesses low dielectric constant (1.55 ± 0.04@1 MHz), excellent Young’s modulus (6.69 ± 0.54 GPa), and ideal hydrophobic property (90.2° of water contact angle) simultaneously. These outstanding properties of ADH-based PMO film can be ascribed to lower polarity, lower density, and rigid cavity structure of adamantane, which suggests its potential application as high-performance low-κ material in next-generation microelectronics.

Keywords

Periodic mesoporous organosilica Low electric constant Mechanical property Thin film 

Notes

Acknowledgements

This work was financially supported by National Natural Science Foundation of China (Grant No. 21201175, 61505123, and 21601065), NSFC––Guangdong Jointed Funding (U1601202), NSFC––Shenzhen Robot Jointed Funding (U1613215), Guangdong and Shenzhen Innovative Research Team Program (No. 2011D052, KYPT20121228160843692), Key Laboratory of Guangdong Province (2014B030301014), and R&D Funds for basic Research Program of Shenzhen (Grant No. JCYJ20120615140007998, 20150401145529012, and 20150525092940976) and Shenzhen Fundamental Research Program (Grant No. JCYJ20160331191741738 and JSGG20160229194437896).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary material

10971_2018_4582_MOESM1_ESM.doc (748 kb)
Figure legends

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Guangdong Provincial Key Laboratory of Materials for High Density Electronic Packaging, Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhenChina
  2. 2.Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronics EngineeringShenzhen UniversityShenzhenChina
  3. 3.School of Material Science and EngineeringUniversity of JinanJinanChina
  4. 4.School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaUSA
  5. 5.Faculty of EngineeringThe Chinese University of Hong KongHong KongChina

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