Journal of Sol-Gel Science and Technology

, Volume 81, Issue 2, pp 570–575 | Cite as

Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

  • Sun Woong Han
  • Jee Ho Park
  • Young Bum Yoo
  • Keun Ho Lee
  • Kwang Hyun Kim
  • Hong Koo Baik
Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric


We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (J leak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower J leak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics.

Graphical Abstract


Solution-process Oxide Thin-Film Transistor Dielectric layer Laminated structure 



This work was supported by LG Display.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Sun Woong Han
    • 1
  • Jee Ho Park
    • 1
  • Young Bum Yoo
    • 1
  • Keun Ho Lee
    • 1
  • Kwang Hyun Kim
    • 1
  • Hong Koo Baik
    • 1
  1. 1.Department of Materials Science and EngineeringYonsei UniversitySeoulSouth Korea

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