Journal of Sol-Gel Science and Technology

, Volume 81, Issue 2, pp 570–575 | Cite as

Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors

  • Sun Woong Han
  • Jee Ho Park
  • Young Bum Yoo
  • Keun Ho Lee
  • Kwang Hyun Kim
  • Hong Koo Baik
Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric

Abstract

We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (J leak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower J leak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics.

Graphical Abstract

Keywords

Solution-process Oxide Thin-Film Transistor Dielectric layer Laminated structure 

Notes

Acknowledgments

This work was supported by LG Display.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

References

  1. 1.
    Kim KM, Kim CW, Heo J–S, Na H, Lee JE, Park CB, Bae J-U, Kim C–D, Jun M, Hwang YK, Meyers ST, Grenville A, Keszler DA (2011) Appl Phys Lett 99:242109CrossRefGoogle Scholar
  2. 2.
    Kim Y–H, Heo J–S, Kim T–H, Park S, Yoon M–H, Kim J, Oh MS, Yi G–R, Noh Y–Y, Park SK (2012) Nature 489:128CrossRefGoogle Scholar
  3. 3.
    Kim M–G, Kanatzidis MG, Facchetti A, Marks TJ (2011) Nat Mater 10:382CrossRefGoogle Scholar
  4. 4.
    Rim YS, Lim HS, Kim HJ (2013) ACS Appl Mater Interfaces 5:3565CrossRefGoogle Scholar
  5. 5.
    Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EFd (2006) J Appl Phys 100:104103CrossRefGoogle Scholar
  6. 6.
    Afanas’ev VV, Houssa M, Stesmans A, Heyns MM (2002) J Appl Phys 91:3079CrossRefGoogle Scholar
  7. 7.
    Adamopoulos G, Thomas S, Bradley DDC, McLachlan MA, Anthopoulos ThomasD (2011) Appl Phys Lett 98:123503CrossRefGoogle Scholar
  8. 8.
    Yoo YB, Park JH, Lee KH, Lee HW, Song KM, Lee SJ, Baik HK (2013) J Mater Chem C 1:1651CrossRefGoogle Scholar
  9. 9.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK (2013) ACS Appl Mater Interfaces 5:410CrossRefGoogle Scholar
  10. 10.
    Martin D, Grube M, Weinreich W, Müller J, Weber WM, Schröder U, Riechert H, Mikolajick T (2013) J Appl Phys 113:194103CrossRefGoogle Scholar
  11. 11.
    Nigro RL, Schilirò E, Greco G, Fiorenza P, Roccaforte F (2016) Thin Solid Films 601:68–72CrossRefGoogle Scholar
  12. 12.
    Baek Y, Lim S, Kim LH, Park S, Lee SW, Oh TH, Kim SH, Park CE (2016) Org Electron 28:139CrossRefGoogle Scholar
  13. 13.
    Skarp, JI (1984) U.S. Patent, 4,486,487Google Scholar
  14. 14.
    Park JH, Lee SJ, Lee TI, Kim JH, Kim C–H, Chae GS, Ham M–H, Baik HK, Myoung J–M (2013) J Mater Chem C 1:1840CrossRefGoogle Scholar
  15. 15.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Choi WJ, Baik HK (2012) Appl Phys Express 5:111101CrossRefGoogle Scholar
  16. 16.
    Jin H, Oh SK, Cho M-H, Kang HJ (2006) Appl Phys Lett 89:122901CrossRefGoogle Scholar
  17. 17.
    Livage J, Sanchez C (1992) J Non-Cryst Solids 145:11CrossRefGoogle Scholar
  18. 18.
    Cheng B, Tian B, Xie C, Xiao Y, Lei S (2011) J Mater Chem 21:1907CrossRefGoogle Scholar
  19. 19.
    Acton O, II GGT, Ma H, Hutchins D, Wang Y, Purushothaman B, Anthony JE, Jen AK-Y (2009) J Mater Chem 19:7929CrossRefGoogle Scholar
  20. 20.
    Mahata C, Bera MK, Hot MK, Das T, Mallik S, Majhi B, Verma S, Bose PK, Maiti CK (2009) Microelectron Eng 86:2180CrossRefGoogle Scholar
  21. 21.
    Avis C, Jang J (2011) J Mater Chem 21:10649CrossRefGoogle Scholar
  22. 22.
    Dengel AC, Griffith WP (1989) Polyhedron 8:1371CrossRefGoogle Scholar
  23. 23.
    Zhao Y, Kita K, Kyuno K, Toriumi A (2009) Appl Phys Lett 94:042901CrossRefGoogle Scholar
  24. 24.
    Park JH, Kim KJ, Yoo YB, Park SY, Lim KH, Lee KH, Baik HK, Kim YS (2013) J Mater Chem C 1:1840CrossRefGoogle Scholar
  25. 25.
    Kagan CR, Andry PWE (2003) Thin Film Transistors. Dekker, New York, p 85CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Sun Woong Han
    • 1
  • Jee Ho Park
    • 1
  • Young Bum Yoo
    • 1
  • Keun Ho Lee
    • 1
  • Kwang Hyun Kim
    • 1
  • Hong Koo Baik
    • 1
  1. 1.Department of Materials Science and EngineeringYonsei UniversitySeoulSouth Korea

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