Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors
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We fabricated a solution-processed laminated dielectric and investigated its structural, optical, and electrical properties. The laminated ZrO2 (Z) and Al2O3 (A) dielectric effectively blocked the leakage current density (J leak) and showed a high breakdown voltage. In particular, the AZA laminated dielectric showed a lower J leak and a higher breakdown voltage than the ZAZ dielectric, because of the large band gap and minimal defects in the Al2O3 film. Finally, we demonstrated the low-voltage indium zinc oxide thin-film transistor (less than 3 V) on laminated dielectric, which displayed excellent switching characteristics.
KeywordsSolution-process Oxide Thin-Film Transistor Dielectric layer Laminated structure
This work was supported by LG Display.
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Conflict of interest
The authors declare that they have no conflict of interest.
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