The performance of CdS quantum dot sensitized ZnO nanorod-based solar cell
ZnO nanorods (NRs) have been grown by sol–gel dip-coating method on FTO glass plates. The CdS quantum dots (QDs) were deposited on the as-prepared ZnO NRs by successive ionic layer adsorption and reaction method. The structural characteristics of the ZnO NRs, CdS QD and CdS QD-sensitized ZnO NRs films have been studied using X-ray diffraction method. ZnO NRs exhibit hexagonal structure. CdS QD had a size of 2 nm. The FESEM image showed the presence of CdS quantum dots on the ZnO NRs. From the optical studies, the optical band gap energy of ZnO thin film was found to be 3.26 eV and the band gap energy of CdS quantum dot was observed to be 2.1 eV. The optical absorption edge was found at 370 nm for ZnO NRs and at 460 nm for the CdS QD. The PL spectra of the prepared ZnO NRs and CdS QDs sample exhibit a strong emission peak at 395 and 688 nm. Solar cells have been fabricated using the CdS quantum dot sensitized ZnO nanorods, and the efficiency of the cell was 1.3 %.
KeywordsSol–gel method ZnO nanorods CdS quantum dot Solar cell J–V characteristics
The authors thank CSIR (Council of Scientific and Industrial Research), India for providing financial support to carry out this research work.
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