Journal of Sol-Gel Science and Technology

, Volume 73, Issue 1, pp 260–264 | Cite as

Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors

  • Jee Ho Park
  • Young Bum Yoo
  • Jin Young Oh
  • Tae Il Lee
  • Se Jong Lee
  • Hong Koo Baik
Brief Communication


We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.


Solution-processed metal oxide thin film transistor Threshold voltage stability Partial charge model Electron trapping times Defect sites 



This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display.


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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringYonsei UniversitySeoulRepublic of Korea
  2. 2.Department of Materials Science and EngineeringKyungsung UniversityBusanRepublic of Korea
  3. 3.College of BioNano TechnologyGachon UniversitySeongnamRepublic of Korea

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