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Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors

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Abstract

We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.

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Acknowledgments

This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea

    Jee Ho Park, Young Bum Yoo, Jin Young Oh & Hong Koo Baik

  2. Department of Materials Science and Engineering, Kyungsung University, Busan, 608-736, Republic of Korea

    Se Jong Lee

  3. College of BioNano Technology, Gachon University, Seongnam, Gyeonggi-Do, 461-701, Republic of Korea

    Tae Il Lee

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  1. Jee Ho Park
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  2. Young Bum Yoo
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  3. Jin Young Oh
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  4. Tae Il Lee
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  5. Se Jong Lee
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  6. Hong Koo Baik
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Correspondence to Se Jong Lee or Hong Koo Baik.

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Park, J.H., Yoo, Y.B., Oh, J.Y. et al. Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors. J Sol-Gel Sci Technol 73, 260–264 (2015). https://doi.org/10.1007/s10971-014-3560-9

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  • DOI: https://doi.org/10.1007/s10971-014-3560-9

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