Journal of Sol-Gel Science and Technology

, Volume 73, Issue 1, pp 260–264 | Cite as

Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors

Brief Communication


We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.


Solution-processed metal oxide thin film transistor Threshold voltage stability Partial charge model Electron trapping times Defect sites 



This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display.


  1. 1.
    Kim YH, Heo JS, Kim TH, Park S, Yoon MH, Kim J, Oh MS, Yi GR, Noh YY, Park SK (2012) Nature 489:128–132CrossRefGoogle Scholar
  2. 2.
    Park JH, Chae SS, Yoo YB, Lee JH, Lee TI, Baik HK (2014) Chem Phys Lett 597:121–125CrossRefGoogle Scholar
  3. 3.
    Kim MG, Kanatzidis MG, Facchetti A, Marks TJ (2011) Nat Mater 10:382–388CrossRefGoogle Scholar
  4. 4.
    Meyers ST, Anderson JT, Hung CM, Thompson J, Wager JF, Keszler DA (2008) J Am Chem Soc 130:17603–17609CrossRefGoogle Scholar
  5. 5.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK (2013) ACS Appl Mater Interfaces 5:8067–8075CrossRefGoogle Scholar
  6. 6.
    Hwang YH, Seo JS, Yun JM, Park H, Yang S, Park SHK, Bae BS (2013) NPG Asia Mater 5:e45CrossRefGoogle Scholar
  7. 7.
    Banger KK, Yamashita Y, Mori K, Peterson RL, Leedham T, Rickard J, Sirringhaus H (2011) Nat Mater 10:45–50CrossRefGoogle Scholar
  8. 8.
    Park JH, Choi WJ, Chae SS, Oh JY, Lee SJ, Song KM, Baik HK (2011) Jpn J Appl Phys 50:080202CrossRefGoogle Scholar
  9. 9.
    Jeong WH, Kim GH, Shin HS, Ahn BD, Kim HJ, Ryu MK, Park KB, Seon JB, Lee SY (2010) Appl Phys Lett 96:093503CrossRefGoogle Scholar
  10. 10.
    Jun T, Song K, Jung Y, Jeong S, Moon J (2011) J Mater Chem 21:13524–13529CrossRefGoogle Scholar
  11. 11.
    Rim YS, Kim DL, Jeong WH, Kim HJ (2010) Appl Phys Lett 97:233502CrossRefGoogle Scholar
  12. 12.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Choi WJ, Baik HK (2012) Appl Phys Express 5:111101CrossRefGoogle Scholar
  13. 13.
    Park JH, Yoo YB, Oh JY, Lee JH, Lee TI, Baik HK (2014) Appl Phys Express 7:051101CrossRefGoogle Scholar
  14. 14.
    Kim YS, Tai WP, Shu SJ (2005) Thin Solid Films 491:153–160CrossRefGoogle Scholar
  15. 15.
    Hsieh PT, Chen YC, Kao KS, Wang CM (2008) Appl Phys A Mater Sci Process 90:317–321CrossRefGoogle Scholar
  16. 16.
    Schaeffer JK, Gilmer DC, Samavedam S, Raymond M, Haggag A, Kalpat S, Steimle B, Capasso C, White BE (2007) J Appl Phys 102:074511CrossRefGoogle Scholar
  17. 17.
    Cho IT, Lee JM, Lee JH, Kwon HI (2009) Semicond Sci Technol 24:015013CrossRefGoogle Scholar
  18. 18.
    Lee JM, Cho IT, Lee JH, Kwon HI (2008) Appl Phys Lett 93:093504CrossRefGoogle Scholar
  19. 19.
    Lim SJ, Kim JM, Kim D, Kwon SJ, Park J, Kim HJ (2010) J Electrochem Soc 157:H214CrossRefGoogle Scholar
  20. 20.
    Nugent LJ (1975) J Inorg Nucl Chem 37:1767–1770CrossRefGoogle Scholar
  21. 21.
    Livage J, Henry M, Sanchez C (1988) Prog Solid State Chem 18:259–341CrossRefGoogle Scholar
  22. 22.
    Livage J (1998) Catal Today 41:3–19CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringYonsei UniversitySeoulRepublic of Korea
  2. 2.Department of Materials Science and EngineeringKyungsung UniversityBusanRepublic of Korea
  3. 3.College of BioNano TechnologyGachon UniversitySeongnamRepublic of Korea

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