Abstract
Encapsulated ZnO nanorod arrays were fabricated using a two-step method; hydrothermal followed by dip-coating. Intensity of X-ray diffraction peaks of ZnO nanorod films increased by encapsulation with ZnO and Fe doped ZnO layer. Encapsulation process increased diameter of the rods in a range of 20–40 nm. The optical studies indicated that the band-gap decreased with increment of the nanorod diameter, and increased with Fe doping in the ZnO layer. The electrical resistance of the samples demonstrated a remarkable reduction due to encapsulation, especially in the sample encapsulated with Fe doped-ZnO layer. The photoresponse behavior of ZnO nanorod films was investigated under different powers of ultraviolet illumination. The photoresponsivity was improved for encapsulated nanorods as compared to bare nanorods.
Similar content being viewed by others
References
Goldberger J, Sirbuly DJ, Law M, Yang PD (2005) J Phys Chem B 109:9
Lin C-C, Lin W-H, Hsiao C-Y, Lin K-M, Li Y-Y (2008) J Phys D 41:045301
Hassan JJ, Mahdi MA, Chin CW, Abu-Hassan H, Hassan Z (2013) Sens Actuators B 176:360
Wang L, Kang Y, Wang Y, Zhu B, Zhang S, Huang W, Wang S (2012) Mater Sci Eng C 32:2079
Chu X, Zhu X, Dong Y, Chen T, Ye M, Sun W (2012) J Electroanal Chem 676:20
Holloway T, Mundle R, Dondapati H, Bahoura M, Pradhan AK (2012) Chem Phys Lett 534:48
Deng J, Wang M, Song X, Shi Y, Zhang X (2012) J Colloid Interface Sci 388:118
Qurashi A, Kim JH, Hahn Y-B (2012) Electrochem Commun 18:88
Mamat MH, Hafizah NN, Rusop M (2013) Mater Lett 93:215
Chien FS-S, Wang C-R, Chan Y-L, Lin H-L, Chen M-H, Wu R-J (2010) Sens Actuators B 144:120
Li Y, Gong J, Deng Y (2010) Sens Actuators A 158:176
Panda SK, Jacob C (2012) Solid State Electron 73:44
Rajabi M, Dariani RS, Iraji Zad A (2012) Sens Actuators A 180:11
Soci C, Zhang A, Xiang B, Dayeh SA, Aplin DPR, Park J, Bao XY, Lo YH, Wang D (2007) Nano Lett 7(4):1003
Weng WY, Chang SJ, Hsu CL, Hsueh TJ, Chang SP (2010) J Electrochem Soc 157(2):K30
Law JBK, Thong JTL (2006) Appl Phys Lett 88:133114
Hsueh T-J, Hsu C-L, Chang S-J, Chen I-C (2007) Sens Actuators B 126(2):473
Peng SM, Su YK, Ji LW, Young SJ, Wu CZ, Tsai CN, Chao WC, Cheng WB (2011) IEEE Sens J 11(5):1173
Yang PY, Wang JL, Tsai WC, Wang SJ, Lin JC, Lee IC, Chang CT, Cheng HC (2010) Thin Solid Films 518:7328
Akhavan O, Mehrabian M, Mirabbaszadeh K, Azimirad R (2009) J Phys D Appl Phys 42:225305
Pearton SJ, Lim WT, Wright JS, Tien LC, Kim HS, Norton DP, Wang HT, Kang BS, Ren F, Jun J, Lin J, Osinsky A (2008) J Electron Mater 37(9):1426
Kar JP, Das SN, Choi JH, Lee YA, Lee TY, Myoung JM (2009) J Cryst Growth 311:3305
Liu CY, Zhang BP, Lu ZW, Binh NT, Wakatsuki K, Segawa Y, Mu R (2009) J Mater Sci Mater Electron 20:197
Kim M-S, Han J-H, Lee D-H, Beom-Hoan O, Lee S-G, Lee E-H, Park S-G (2012) Microelectron Eng 97:130
Yu J, Yuan Z, Han S, Ma Z (2012) Nanoscale Res Lett 7:517
Chen CY, Lin CA, Chen MJ, Lin GR, He JH (2009) Nanotechnology 20:185605
Lee J, Chu BH, Chen K-H, Ren F, Lele TP (2009) Biomaterials 30:4488
Tak Y, Hong SJ, Lee JS, Yong K (2009) J Mater Chem 19:5945
Wang R-C, Lin H-Y (2009) Appl Phys A 95:813
Singhal A, Achary SN, Tyagi AK, Manna PK, Yusuf SM (2008) Mater Sci Eng B 153:47
Lin CC, Young SL, Kung CY, Jhang MC, Lin CH, Kao MC, Chen HZ, Ou CR, Cheng CC, Lin HH (2013) Thin Solid Films 529:479
Liu C, Meng D, Pang H, Wu X, Xie J, Yu X, Chen L, Liu X (2012) J Magn Magn Mater 324:3356
He Z, Li Y, Zhang Q, Wang H (2010) Appl Catal B 93:376
Chatterjee S, Jayakumar OD, Tyagi AK, Ayyu P (2010) J Cryst Growth 312:2724
Wang R-C, Lin H-Y (2010) Sens Actuators B 149:94
Wang C, Chen Z, He Y, Li L, Zhang D (2009) Appl Surf Sci 255:6881
He Y, Zhang W, Zhang S, Kang X, Peng W, Xu Y (2012) Sens Actuators A 181:6
Sun W-C, Yeh Y-C, Ko C-T, He J-H, Chen M-J (2011) Nanoscale Res Lett 6:556
An S, Park S, Ko H, Lee C (2012) J Appl Phys 108:53
Soitah TN, Chunhui Y, Liang S (2010) Sci Adv Mater 2:534
Baek S, Song J, Lim S (2007) Phys B 399:101
Xu L, Li X (2010) J Cryst Growth 312:851
Zhang W-G, Lu B, Zhang L-Q, Lu J-G, Fang M, Wu K-W, Zhao B-H, Ye Z-Z (2011) Thin Solid Films 519:6624
Xia C, Hu C, Tian Y, Chen P, Wan B, Xu J (2011) Solid State Sci 13:388
Chen ZC, Zhuge LJ, Wu XM, Meng YD (2007) Thin Solid Films 515:5462
Soumahoro I, Moubah R, Schmerber G, Colis S, Aouaj MA, Abd-lefdil M, Hassanain N, Berrada A, Dinia A (2010) Thin Solid Films 518:4593
Liu J, Xia Y, Wang L, Su Q, Shi W (2007) Appl Surf Sci 253:5218
Lim ZH, Chia ZX, Kevin M, Wong ASW, Ho GW (2010) Sens Actuators B 151:121
Mehrabian M, Azimirad R, Mirabbaszadeh K, Afarideh H, Davoudian M (2011) Phys E 43:1141
Chen M-W, Chen C-Y, Lien D-H, Ding Y, He J-H (2010) Opt Express 18(14):14836
Ghasempour A, Pazoki M, Mahdavi SM, Bahrampour AR, Taghavinia N (2012) Appl Surf Sci 258:5405
Kumar S, Mukherjee S, Singh RK, Chatterjee S, Ghosh AK (2011) J Appl Phys 110:103508
Lupan O, Chow L, Pauporté Th, Ono LK, Cuenya BR, Chai G (2012) Sens Actuators B 173:772
Lupan O, Ursaki VV, Chai G, Chow L, Emelchenko GA, Tiginyanu IM, Gruzintsev AN, Redkin AN (2010) Sens Actuators B 144:56
Guo L, Zhang H, Zhao D, Li B, Zhang Z, Jiang M, Shen D (2012) Sens Actuators B 166–167:12
Jandow NN, Yam FK, Thahab SM, Hassan HA, Ibrahim K (2010) Curr Appl Phys 10:1452
Li Y, Dong X, Cheng C, Zhou X, Zhang P, Gao J, Zhang H (2009) Phys B 404:4282
Thjeel HA, Suhail AM, Naji AN, Al-Zaidi QG, Muhammed GS, Naum FA (2011) Adv Mater Phys Chem 1:70
Liu KW, Ma JG, Zhang JY, Lu YM, Jiang DY, Li BH, Zhao DX, Zhang ZZ, Yao B, Shen DZ (2007) Solid State Electron 51:757
Chikoidze E, Boshta M, Sayed MH, Dumont Y (2013) J Appl Phys 113:043713
Acknowledgments
The authors would like to thank the Iran National Science Foundation for the financial support of the work.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Azimirad, R., Khayatian, A., Almasi Kashi, M. et al. Electrical investigation and ultraviolet detection of ZnO nanorods encapsulated with ZnO and Fe-doped ZnO layer. J Sol-Gel Sci Technol 71, 540–548 (2014). https://doi.org/10.1007/s10971-014-3406-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10971-014-3406-5