(LaBa)Co2O5+δ (LBCO) thin films were successfully fabricated on Si (001) substrates by polymer-assisted deposition method. Microstructures were examined by X-ray diffraction technique, which confirmed the films were a single phase, pseudo cubic structure. The electrical transport properties of the films were investigated by the temperature dependence of films resistance, which suggested that LBCO films have typical semiconductor properties. After circle tests, the oxygen–hydrogen response rate did not show obvious variation in the specific temperature environment of 580 °C. This demonstrates that the LBCO thin films have a superior stability in both oxygen and hydrogen (6 % H2, 94 % N2) environment. Simultaneously, the drastic changes of films resistance (from ~106 to ~102 Ω) with the switch of redox (O2–H2) environment within such a short time (~2.2 s) indicated that LBCO films have an excellent oxygen sensitive property and extraordinary fast surface exchange rate.
Thin films Oxygen sensitive Crystal growth Surfaces Polymer assisted deposition
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This work is supported by the Fundamental Research Funds for the Central Universities of China (Nos. ZYGX2011J028 and ZYGX2012J037), the Guangdong Innovative Research Team Program (No. 201001D0104713329) and the Cooperation Project in Industry, Education and Research of Guangdong Province and Ministry of Education of PR China (No. 2012B091100097).