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The oxygen sensitive properties of (LaBa)Co2O5+δ thin films fabricated by polymer-assisted deposition technique

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Abstract

(LaBa)Co2O5+δ (LBCO) thin films were successfully fabricated on Si (001) substrates by polymer-assisted deposition method. Microstructures were examined by X-ray diffraction technique, which confirmed the films were a single phase, pseudo cubic structure. The electrical transport properties of the films were investigated by the temperature dependence of films resistance, which suggested that LBCO films have typical semiconductor properties. After circle tests, the oxygen–hydrogen response rate did not show obvious variation in the specific temperature environment of 580 °C. This demonstrates that the LBCO thin films have a superior stability in both oxygen and hydrogen (6 % H2, 94 % N2) environment. Simultaneously, the drastic changes of films resistance (from ~106 to ~102 Ω) with the switch of redox (O2–H2) environment within such a short time (~2.2 s) indicated that LBCO films have an excellent oxygen sensitive property and extraordinary fast surface exchange rate.

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Acknowledgments

This work is supported by the Fundamental Research Funds for the Central Universities of China (Nos. ZYGX2011J028 and ZYGX2012J037), the Guangdong Innovative Research Team Program (No. 201001D0104713329) and the Cooperation Project in Industry, Education and Research of Guangdong Province and Ministry of Education of PR China (No. 2012B091100097).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, People’s Republic of China

    Dunhua Hong, Taisong Pan, Dayu Feng, Zhenlong Huang, Feiyi Liao, XiaoMei Li, Yin Zhang & Min Gao

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  1. Dunhua Hong
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  2. Taisong Pan
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  3. Dayu Feng
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  4. Zhenlong Huang
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  7. Yin Zhang
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  8. Min Gao
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Correspondence to Dunhua Hong.

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Hong, D., Pan, T., Feng, D. et al. The oxygen sensitive properties of (LaBa)Co2O5+δ thin films fabricated by polymer-assisted deposition technique. J Sol-Gel Sci Technol 71, 464–469 (2014). https://doi.org/10.1007/s10971-014-3395-4

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  • DOI: https://doi.org/10.1007/s10971-014-3395-4

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