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Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature

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Abstract

Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device properties were researched. The a-IGZO thin films were uniform and smooth, root mean square roughness of IGZO films was less than 0.4 nm, and the transmittance was more than 80 % in the visible wavelength. The results showed that An appropriate amount of Ga doping and annealing temperature could significant improve the a-IGZO TFTs’ device performance. A saturation mobility of 0.04 cm2 V−1 s−1 was obtained when the Ga concentration reached 10.7 %.

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Acknowledgments

This work was supported by National Natural Science Foundation of China under Grant No 61006005 and Shanghai science and technology commission under Grant No 10dz1100102.

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Authors and Affiliations

  1. Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China

    Xifeng Li, Qian Li & Jianhua Zhang

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  1. Xifeng Li
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  2. Qian Li
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  3. Jianhua Zhang
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Correspondence to Xifeng Li.

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Li, X., Li, Q. & Zhang, J. Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature. J Sol-Gel Sci Technol 66, 497–503 (2013). https://doi.org/10.1007/s10971-013-3037-2

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  • DOI: https://doi.org/10.1007/s10971-013-3037-2

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