Journal of Sol-Gel Science and Technology

, Volume 66, Issue 3, pp 497–503 | Cite as

Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature

Original Paper


Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device properties were researched. The a-IGZO thin films were uniform and smooth, root mean square roughness of IGZO films was less than 0.4 nm, and the transmittance was more than 80 % in the visible wavelength. The results showed that An appropriate amount of Ga doping and annealing temperature could significant improve the a-IGZO TFTs’ device performance. A saturation mobility of 0.04 cm2 V−1 s−1 was obtained when the Ga concentration reached 10.7 %.


Solution Low temperature Amorphous Indium-Gallium-Zinc-Oxygen (a-IGZO) Thin film transistors (TFTs) 



This work was supported by National Natural Science Foundation of China under Grant No 61006005 and Shanghai science and technology commission under Grant No 10dz1100102.


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai UniversityShanghaiChina

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