Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors
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Indium–zinc oxide (IZO) thin films were fabricated by spin coating using acetate- and nitrate-based precursors, and thin film transistors (TFTs) were further fabricated employing the IZO films as the active channel layer. The impact of the indium concentration on the properties of the solutions, the structure and optical transmittance properties of the IZO films and the IZO TFTs device properties were researched in this article. The IZO films with amorphous structure were obtained when the annealing temperature is 500 °C. The transmittance could reach ~90 % (including glass substrate) during the visible region of 400–760 nm. Higher indium concentration can improve the IZO TFTs’ filed effect mobility. A Ion–Ioff of 6.0 × 106 and a mobility of 0.13 cm2/Vs were obtained when the indium concentration is 60 %. IZO TFTs’ performance could deteriorate when the indium concentration more than 60 %.
KeywordsIndium–zinc oxide (IZO) Solution process Thin film transistors Transmittance
This work was supported by National Natural Science Foundation of China under Grant No. 61006005 and Shanghai science and technology commission under Grant No. 10dz1100102.
- 16.Seo SJ, Choi CG, Hwang YH, Bae BS (2008) SID 08 DIGEST 1254Google Scholar