Journal of Sol-Gel Science and Technology

, Volume 64, Issue 3, pp 711–717 | Cite as

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

  • Ling Pei
  • Ni Hu
  • Gang Deng
  • Yiwan Chen
  • Yeguang Bie
  • Meiya Li
  • Xiaolian Liu
Original Paper


The effects of Tb substitution on the structural and electrical properties of ferroelectric Bi4Ti3O12 (BTO) thin films grown on Pt/TiO2/SiO2/Si substrates by a sol–gel process have been reported. X-ray diffraction indicated A-site Tb substitutions did not change the polycrystalline bi-layered Aurivillius structure of the BTO, but a lattice distortion was observed. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10−2 to 10−4 A/cm2 with the increase of x under 150 kV/cm. The remnant polarization (2P r ) and dielectric constant (ε r) increase firstly and then decreases with the increase of the Tb content. We observed a substantial increase in the remnant polarization (2P r ) with Tb substitution and obtained a maximum value of~60 μC/cm2 at an applied electric field of 500 kV/cm for x = 0.4. Moreover, this BTT-0.4 capacitor did not show fatigue behaviors after 1.0 × 1010 switching cycles, suggesting an anti-fatigue character.


Bi4Ti3O12 ferroelectric film High-valence Tb-doping Tb content Anti-fatigue Sol–gel technique 



This work was supported by the Natural Science Foundation of China (Granted No. 50872097) and the Natural Science Foundation of China (Granted No. 11074193).


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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • Ling Pei
    • 1
  • Ni Hu
    • 1
  • Gang Deng
    • 1
  • Yiwan Chen
    • 1
  • Yeguang Bie
    • 1
  • Meiya Li
    • 2
  • Xiaolian Liu
    • 2
  1. 1.School of ScienceHubei University of TechnologyWuhanPeople’s Republic of China
  2. 2.Department of PhysicsWuhan UniversityWuhanPeople’s Republic of China

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