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Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

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Abstract

The effects of Tb substitution on the structural and electrical properties of ferroelectric Bi4Ti3O12 (BTO) thin films grown on Pt/TiO2/SiO2/Si substrates by a sol–gel process have been reported. X-ray diffraction indicated A-site Tb substitutions did not change the polycrystalline bi-layered Aurivillius structure of the BTO, but a lattice distortion was observed. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10−2 to 10−4 A/cm2 with the increase of x under 150 kV/cm. The remnant polarization (2P r ) and dielectric constant (ε r) increase firstly and then decreases with the increase of the Tb content. We observed a substantial increase in the remnant polarization (2P r ) with Tb substitution and obtained a maximum value of~60 μC/cm2 at an applied electric field of 500 kV/cm for x = 0.4. Moreover, this BTT-0.4 capacitor did not show fatigue behaviors after 1.0 × 1010 switching cycles, suggesting an anti-fatigue character.

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Acknowledgments

This work was supported by the Natural Science Foundation of China (Granted No. 50872097) and the Natural Science Foundation of China (Granted No. 11074193).

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Authors and Affiliations

  1. School of Science, Hubei University of Technology, Wuhan, 430068, People’s Republic of China

    Ling Pei, Ni Hu, Gang Deng, Yiwan Chen & Yeguang Bie

  2. Department of Physics, Wuhan University, Wuhan, 430072, People’s Republic of China

    Meiya Li & Xiaolian Liu

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  1. Ling Pei
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  2. Ni Hu
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  3. Gang Deng
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  7. Xiaolian Liu
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Correspondence to Ling Pei.

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Pei, L., Hu, N., Deng, G. et al. Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method. J Sol-Gel Sci Technol 64, 711–717 (2012). https://doi.org/10.1007/s10971-012-2906-4

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