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An investigation of the microstructure, optical and electrical properties of ZITO thin film using the sol–gel method

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Abstract

The multi-compound ZITO transparent conductive oxide (TCO) thin films were synthesized using the sol–gel method. The ZITO thin films with various volume ratios of ZnO to ITO (1:1, 2:1 and 9:1) were crystallized at different temperatures (600–700 °C). The results showed that the crystalline characteristics and optical transmittance were mainly dependent on ITO content and crystallization. Notably, the 650 °C Z9ITO film not only had better conductivity but also possessed excellent optical transmittance. In addition, the surface roughness of the ZITO films and optoelectric properties of IZO (indium doped ZnO) films were analyzed to confirm the contribution of indium dopants on the optical transmittance. Also, the ZITO films were subjected to the effects of indium and tin dopants and this improved the related characteristics of ZnO films.

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Acknowledgments

The authors are grateful to National Cheng Kung University, the Center for Micro/Nano Science and Technology (D98-2700) and NSC 98-2221-E-006-068; NSC 98-2622-E-006-024-CC3 for the financial support.

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Authors and Affiliations

  1. Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan

    K. J. Chen, S. J. Chang, S. J. Young & S. P. Chang

  2. Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan

    F. Y. Hung

  3. Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan

    Z. S. Hu

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  1. K. J. Chen
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  2. F. Y. Hung
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Correspondence to F. Y. Hung.

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Chen, K.J., Hung, F.Y., Chang, S.J. et al. An investigation of the microstructure, optical and electrical properties of ZITO thin film using the sol–gel method. J Sol-Gel Sci Technol 54, 347–354 (2010). https://doi.org/10.1007/s10971-010-2202-0

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  • DOI: https://doi.org/10.1007/s10971-010-2202-0

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