Journal of Sol-Gel Science and Technology

, Volume 48, Issue 3, pp 294–302 | Cite as

Effects of acetoin as chelating agent on the preparation of SrBi2Ta2O9 thin films from non-hydrolyzing precursors

  • R. Machado
  • M. L. Santiago
  • M. G. Stachiotti
  • A. Frattini
  • N. Pellegri
  • R. Bolmaro
  • O. de Sanctis
Original Paper


Ferroelectric thin films of strontium bismuth tantalate (SBT) have been fabricated by a chemical solution deposition technique using non-hydrolyzing precursors. Strontium acetate, bismuth nitrate and tantalum ethoxide were used as precursor materials, with methanol and glacial acetic as solvents. We investigate the effects of the precursor chemistry, by the selection of the chelating agent, on the elimination of residual organic compounds, thermal evolution of phase formation, and microstructure evolution of derived films. We found that the utilization of alkanolamines as chelating agent produce the segregation of metallic bismuth in as-prepared powders. On the other hand, acetoin, one of the hydroxyketones, showed the elimination of residual organics at low temperature, an earlier onset of crystallization, and no segregation of secondary phases during the whole crystallization process. A comparative investigation of the surface microstructure, grain size distribution, crystallinity, and degree of crystal orientation of films fabricated with the different chelating agents is presented. The dielectric and ferroelectric properties of films prepared with acetoin are investigated.


Ferroelectrics SBT Thin films Precursor chemistry 



This work was supported by Agencia Nacional de Promoción Científica y Tecnológica and Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina). M.G.S. thanks support from CIUNR. R.M. thanks Fundación Josefina Pratts.


  1. 1.
    Scott JF (2000) Ferroelectric memories, Springer series in advanced microelectronic, 3, Springer-Verlag, BerlinGoogle Scholar
  2. 2.
    Paz de Araujo CA, Cuchiaro JD, McMillan LD, Scott MC, Scott JF (1995) Nature 374:627CrossRefGoogle Scholar
  3. 3.
    Osaka T, Sakakibara A, Seki T, Ono S, Koiwa I, Hashimoto A (1998) Jpn J Appl Phys 37:597CrossRefGoogle Scholar
  4. 4.
    Moert M, Schindlera G, Mikolajicka T, Nagela N, Hartnera W, Dehma C, Kohlstedt H, Waser R (2005) Appl Surf Sci 249:23–30CrossRefGoogle Scholar
  5. 5.
    Hase T, Noguchi T, Amanuma K, Miyasaka Y (1997) Integr Ferroelectr 15:127CrossRefGoogle Scholar
  6. 6.
    Moert M, Schindler G, Hartner W, Kasko I, Kastner MJ, Mikolajick T, Dehm C, Waser R (2000) Integr Ferroelectr 30:235CrossRefGoogle Scholar
  7. 7.
    Li A, Wu D, Ling H, Yu T, Wang M, Yin X, Liu Z, Ming N (2000) Thin Solid Films 375:215CrossRefGoogle Scholar
  8. 8.
    Kim K-T, Kim C-I (2004) Microelectron Eng 71:266CrossRefGoogle Scholar
  9. 9.
    Zurbuchen MA, Lettieri J, Fulk SJ, Jlia Y, Carim AH, Schlom DG, Streiffer SK (2003) Appl Phys Lett 82:4711CrossRefGoogle Scholar
  10. 10.
    Seong N, Yang C, Shin W, Yoon S (1998) Appl Phys Lett 72:1374CrossRefGoogle Scholar
  11. 11.
    Zhu X, Liu Y, An Z, Zhu T, Wu Z, Yu T, Liu Z, Ming N (2000) Thin Solid Films 375:200CrossRefGoogle Scholar
  12. 12.
    Jae-Sun K, Cheol-Hoon Y, Soon-Gil Y, Won-Youl C, Ho-Gi K (1999) Appl Surf Sci 140:150CrossRefGoogle Scholar
  13. 13.
    Wang W, Jia DC, Zhou Y, Rao JC, Ye F (2002) Ceramics Int 28:609CrossRefGoogle Scholar
  14. 14.
    Lee KS, Sohna DS, Hong SH, Lee WI, Kim YT, Chae HK, Chung I (2001) Thin Solid Films 394:142Google Scholar
  15. 15.
    Kim S, Kim DJ, Im J, Kim CE, Kingon AI (1999) J Sol–Gel Sci Technol 16:57CrossRefGoogle Scholar
  16. 16.
    Kim S, Kim DJ, Lee KM, Park M, Kingon AI, Nemanich RJ, Im J, Streiffer SK (1999) J Mater Res 14:4395CrossRefGoogle Scholar
  17. 17.
    Stachiotti MG, Machado R, Frattini A, Pellegri N, de Sanctis O (2005) J Sol–Gel Sci Technol 36:53CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • R. Machado
    • 1
  • M. L. Santiago
    • 2
  • M. G. Stachiotti
    • 1
  • A. Frattini
    • 3
  • N. Pellegri
    • 2
  • R. Bolmaro
    • 1
  • O. de Sanctis
    • 2
  1. 1.Instituto de Física RosarioUNRRosarioArgentina
  2. 2.Laboratorio de Materiales CerámicosFCEIyA, IFIR, UNRRosarioArgentina
  3. 3.Área FísicaFCByF, UNRRosarioArgentina

Personalised recommendations