Abstract
Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.
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Yamakawa K, Trolier-Mckinstry S, Dougherty JP, Krupanidhi SB (1995) Appl Phys Lett 67:2014
Seveno R, Gundel HW, Seifert S (2001) Appl Phys Lett 79:4204
Xu B, Moses P, Pai NG, Cross LE (1998) Appl Phys Lett 72:593
Jang JH, Yoon KH, Shin HJ (1998) Appl Phys Lett 73:1823
Xu B, Ye Y, Cross LE (2000) J Appl Phys 87:2507
Xu B, Cross LE, Bernstein JJ (2000) Thin Sol Films 377:712
Zhai J, Cheung MH, Xu ZK, Li X, Chen H, Colla EV, Wu TB (2002) Appl Phys Lett 81:3621
Zhai J, Li X, Yao Y, Chen Haydn (2003) Mater Sci Engng B 99:230
Park S-E, Pan M-J, Markowski K (1997) J Appl Phys 82:1798
Lee HY, Wu TB (1998) J Mater Res 13:2291
Bharadwaja SSN, Krupanidhi SB (1999) J Appl Phys 86:5862
Pertsev NA, Zembilgotov AG, Tagantsev AK (1998) Phys Rev Lett 80:1988
Lee JJ, Thio CL, Desu SB (1995) J Appl Phys 78:5073
Zhai J, Yao Y, Li X, Hung TF, Xu ZK, Chen H, Colla EV, Wu TB (2002) J Appl Phys 92(7):3990–3994
Tani T, Li JF, Viehland D, Payne DA (1994) J Appl Phys 75:3017
Samara GA (1970) Phys Rev B 1:3777
Ujma Z, Handerek J, Pisarski M (1985) Ferroelectrics 64:237
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Zhai, J., Shen, B., Yao, X. et al. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO3-buffered silicon substrates by sol-gel processing. J Sol-Gel Sci Technol 42, 369–373 (2007). https://doi.org/10.1007/s10971-007-0767-z
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DOI: https://doi.org/10.1007/s10971-007-0767-z