Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.
Antiferroelectric Thin film Sol-gel process Electrical property Phase transformation
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