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Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO3-buffered silicon substrates by sol-gel processing

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Abstract

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.

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Authors and Affiliations

  1. Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China

    Jiwei Zhai, Bo Shen & Xi Yao

  2. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

    Zhengkui Xu, Xin Li & Haydn Chen

Authors
  1. Jiwei Zhai
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  2. Bo Shen
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  3. Xi Yao
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  4. Zhengkui Xu
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  5. Xin Li
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  6. Haydn Chen
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Correspondence to Jiwei Zhai.

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Zhai, J., Shen, B., Yao, X. et al. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO3-buffered silicon substrates by sol-gel processing. J Sol-Gel Sci Technol 42, 369–373 (2007). https://doi.org/10.1007/s10971-007-0767-z

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  • DOI: https://doi.org/10.1007/s10971-007-0767-z

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