Structural, optical and photoelectric properties of ZnO:In and Mg x Zn1 −x O nanofilms prepared by sol-gel method

  • Y. C. Liu
  • Y. W. Chen
  • C. L. Shao
  • S. X. Lu


ZnO, ZnO:In and Mg x Zn1− x O alloy films with hexagonal wurtzite structures were fabricated using sol-gel method. X-ray diffraction (XRD), UV-Vis absorption spectra and photoluminescence spectra were used to characterize the structural and optical properties of the films. XRD spectra illustrated that no single In2O3 or MgO phase was observed for the compound materials. The photoluminescence spectra of ZnO showed a strong UV emission band and a very weak visible emission associated with deep level defects. In incorporation induced the shift of optical band gap, quenching of the near-band-edge emission. The photoelectric conversion properties of ZnO:In nanofilms/SiO2/Si heterostructures were investigated, which showed a high intensity photocurrent response in the UV and visible region. The Mg x Zn1− x O films with different x values from 0 to 0.15 were obtained. The intense near-band-edge emissions and weak deep level emissions were observed. The photocurrent properties of Mg0.15Zn0.85O nanofilms/SiO2 were studied.


ZnO ZnO:In MgxZn1−xPhotoelectric conversion Photocurrent response 


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Copyright information

© Springer Science + Business Media, LLC 2006

Authors and Affiliations

  • Y. C. Liu
    • 1
  • Y. W. Chen
    • 1
  • C. L. Shao
    • 1
  • S. X. Lu
    • 2
  1. 1.Center for Advanced Optoelectronic Functional Material ResearchNortheast Normal UniversityChangchunPeople’s Republic of China
  2. 2.Department of Chemistry, School of ScienceBeijing Institute of TechnologyBeijingPeople’s Republic of China

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