Skip to main content
SpringerLink
Log in

Effect of zero bias, 2.7 MeV proton irradiation on HfO2

  • Published:
Journal of Radioanalytical and Nuclear Chemistry Aims and scope Submit manuscript

Abstract

To provide radiation hard device is very critical and when a new technology come into existence it becomes more challenging. In this research paper we have explored the radiation response of hafnium dioxide (HfO2)/silicon (Si) structure based metal oxide semiconductor (MOS) capacitor on p-type substrate, subjected to 2.7 MeV proton irradiation at various fluencies (3.6 × 1012 protons/cm2, 7.2 × 1012 protons/cm2, 1.08 × 1013 protons/cm2, 1.8 × 1013 protons/cm2, 2.16 × 1013 protons/cm2 and 3.6 × 1013 protons/cm2). Through electrical characteristics, radiation hardness of atomic layer deposited HfO2 based MOS capacitor has been investigated. To directly measure interface charge and to evaluate its change with the ionizing doses, capacitance–voltage (C–V) and conductance–voltage (G–V) measurements are taken. To provide an evidence for the change in the device parameters pre and post-irradiation curves are plotted to compare the degradation of the device. Shift in C–V and G–V characteristics were observed in irradiated devices that also indicate a change in flat band voltage, midgap voltage and conductance of devices. Generation of new traps after proton irradiation was also confirmed by these measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9

Similar content being viewed by others

References

  1. Maurya S (2015) Study of atomic layer deposited HfO2/Si interfaces for their quality, reliability and radiation based interface modifications. Ph.D. dissertation, IIIT-Allahabad, India

  2. Maurya S, Tribedi LC, Maringanti R (2014) Engineering of silicon/HfO2 interface by variable energy proton irradiation. Appl Phys Lett 105:071605

    Article  Google Scholar 

  3. Kahraman A, Yilmaz E (2017) Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors. Radiat Phys Chem 139:114–119

    Article  CAS  Google Scholar 

  4. Maurya S (2016) Effect of zero bias gamma ray irradiation on HfO2 thin films. J Mater Sci Mater Electron 27(12):12796–12802

    Article  CAS  Google Scholar 

  5. Kang AY, Lenahan PM, Conley JF (2002) The radiation response of the high dielectric-constant hafnium oxide/silicon system. IEEE Trans Nucl Sci 49(6):2636–2642

    Article  CAS  Google Scholar 

  6. Holmes-Siedle AG, Adams L (2002) Handbook of radiation effects, 2nd edn. Oxford University Press, New York

    Google Scholar 

  7. Maurya S (2017) Interface modification by irradiation with alpha particles. J Mater Sci Mater Electron 28(23):17442–17447

    Article  CAS  Google Scholar 

  8. Maurya S (2015) Silicon/HfO2 interface: effects of proton irradiation. AIP Conf Proc 1665:120041-1-3

    Google Scholar 

  9. Kim TY, Cho K, Park W, Park J, Song Y, Hong S, Hong WK, Lee T (2014) Irradiation effects of high-energy proton beams on MoS2 field effect transistors. ACS Nano 8(3):27742781

    Google Scholar 

  10. Maurya S (2016) Silicon/HfO2 interface: effects of gamma irradiation. AIP Conf Proc 1731:120034

    Article  Google Scholar 

  11. Schwank JR, Shaneyfelt MR, Fleetwood DM, Felix JA, Dodd PE, Paillet P, Ferlet-Cavrois V (2008) Radiation effects in MOS oxides. IEEE Trans Nucl Sci 55(4):1833

    Article  CAS  Google Scholar 

  12. Maurya Savita, Shrivastava Sarita (2016) Challenges beyond 100 nm MOS devices. J VLSI Des Tools Technol 6(2):1–4

    Google Scholar 

  13. Felix JA, Fleetwood DM, Schrimpf RD, Hong JG, Lucovsky G, Schwank JR (2002) Total-dose radiation response of hafnium–silicate capacitors. IEEE Trans Nucl Sci 49(6):3191–3196

    Article  CAS  Google Scholar 

  14. Felix JA, Shaneyfelt MR, Fleetwood DM, Schwank JR, Dodd PE, Gusev EP (2004) Charge trapping and annealing in high-K gate dielectrics. IEEE Trans Nucl Sci 51(6):3143–3149

    Article  CAS  Google Scholar 

  15. Dixit SK, Zhou XJ, Schrimpf RD, Fleetwood DM, Pantelide ST, Choi R (2007) Radiation induced charge trapping in ultrathin HfO2-based MOSFETs. IEEE Trans Nucl Sci 54(6):1883–1890

    Article  CAS  Google Scholar 

  16. Wilk GD, Wallace RM, Anthony JM (2001) High-κ gate dielectrics: current status and materials properties considerations. J Appl Phys 89:5243

    Article  CAS  Google Scholar 

  17. Verrelli E, Galanopoulos G, Zouboulis I, Tsoukalas D (2010) Trapping properties of sputtered hafnium oxide films: bulk traps vs. interface traps. Thin Solid Films 518:5579–5584

    Article  CAS  Google Scholar 

  18. Maurya S (2018) Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2. J Mater Sci Mater Electron 29(9):7917–7923

    Article  CAS  Google Scholar 

  19. Ziegler JF, Ziegler MD, Biersack JP (2008) SRIM, the stopping and range of ions in matter. SRIM Company, Chester

    Google Scholar 

  20. Nicollian EH, Brews JR (2003) MOS (metal oxide semiconductor) physics and technology. Wiley, New York

    Google Scholar 

  21. Yilmaz E, Kaleli B, Turan R (2007) A systematic study on MOS type radiation sensors. Nucl Instrum Methods Phys Res B 264(2):287–292

    Article  CAS  Google Scholar 

  22. Ergin FB, Turan R, Shishiyanu ST, Yilmaz E (2010) Effect of γ-radiation on HfO2 based MOS capacitor. Nucl Instrum Methods Phys Res Sect B Beam Interact Mater Atoms 268(9):1482–1485

    Article  CAS  Google Scholar 

  23. Tugluoglu N (2007) 60Co γ-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111) substrates. Nucl Instrum Methods Phys Res B Beam Interact Mater Atoms 254(1):118

    Article  CAS  Google Scholar 

Download references

Acknowledgements

One of the authors would like to thank, Dr. Savita Maurya, her advisor and guide for her instructions and valuable time. Her enthusiasm for Semiconductor Devices research as well as her precise insights in work has been incentive for me. What I learned from her both in research and in real life would be precious treasure which I would always benefit from in my future life. MCN for manuscript is IU/R&D/2018-MCN000257.

Author information

Authors and Affiliations

  1. Department of Electronics & Communication Engineering, Integral University, Lucknow, 226026, India

    Savita Maurya & Supriya Awasthi

Authors
  1. Savita Maurya
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Supriya Awasthi
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Savita Maurya.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Maurya, S., Awasthi, S. Effect of zero bias, 2.7 MeV proton irradiation on HfO2. J Radioanal Nucl Chem 318, 947–953 (2018). https://doi.org/10.1007/s10967-018-6229-y

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10967-018-6229-y

Keywords

Search

Navigation