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Electronic and Magnetic Investigations of Rare-Earth Tm-doped AlGaN Ternary Alloy

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Abstract

Electronic structure and magnetic interaction of substitutional thulium rare earth-doped wurtzite Al0.5Ga0.5N ternary alloy have been performed using density-functional theory within local spin-density approximation with Hubbard-U corrections (LSDA+U) approach. The LSDA+U method is applied to the rare earth (RE) 4f states. The calculation of formation energy shows that it is more energetically favorable for a substitutional Tm atom to replace the Al atom than the Ga atom. For AlGaN:Tm, the lattices parameters are expanded due to larger ionic radius of Tm than that of Al atoms. The energy band gap of AlGaN:Tm has direct character and its width becomes small compared with that of AlGaN. The magnetic coupling between Tm ions in the nearest neighbor sites is ferromagnetic. Magnetic interaction of rare earth ion with the host states at the valence and conduction band edges has been investigated and compared to those of GaN:Mn and has been found to be relatively small.

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Authors and Affiliations

  1. Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000, Sidi Bel-Abbes, Algeria

    S. Belhachi, A. Lazreg & Z. Dridi

  2. Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, 50603, Kuala Lumpur, Malaysia

    Y. Al-Douri

  3. Physics Department, Faculty of Science, University of Sidi-Bel-Abbes, 22000, Sidi Bel-Abbes, Algeria

    Y. Al-Douri

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  1. S. Belhachi
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  2. A. Lazreg
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  3. Z. Dridi
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  4. Y. Al-Douri
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Correspondence to Z. Dridi.

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Belhachi, S., Lazreg, A., Dridi, Z. et al. Electronic and Magnetic Investigations of Rare-Earth Tm-doped AlGaN Ternary Alloy. J Supercond Nov Magn 31, 1767–1771 (2018). https://doi.org/10.1007/s10948-017-4393-x

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  • DOI: https://doi.org/10.1007/s10948-017-4393-x

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