Optical Properties of Mn-Implanted GaN Nanorods
We have investigated the optical properties of vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, Arrhenius plots of the intensities of the Mn acceptor give a thermal activation energy of Δ=350 meV, indicating that the thermal quenching of the Mn-related PL peak is due to the dissociation of an acceptor-bound hole from the temperature-dependent PL spectra. This suggests that the Mn-bound holes in GaN nanorods exhibit the impurity states predicted by the hydrogen model.
KeywordsPhotoluminescence Mn-Implantation Nanorods Semi-conducting III–V materials
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (No. 2012-0007190) and (No. 2012-0000217) as well as by Leading Foreign Research Institute Recruitment Program through NRF funded by MEST (Grant No. 2012-00109) and QSRC of Dongguk University.
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