Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films
We report the forming-free unipolar resistive switching effects in polycrystalline BiFe0.95Co0.05O3 films which were spin-coated on ITO/glass substrates by a chemical solution deposition method. The resistive ratio of the high resistive state (HRS) to the low resistive state (LRS) is more than 2 orders of magnitude. The conduction of the HRS is dominated by the space-charge-limited conduction mechanism, while Ohmic behavior dominates the LRS, which suggests a filamentary conduction mechanism. The oxygen vacancies are considered to play an important role in forming the conducting filaments.
KeywordsUnipolar resistive switching Multiferroics Chemical deposition
This work is supported by the National Natural Science Foundation of China (51172044), the National Science Foundation of Jiangsu Province of China (BK2011617), National Key Projects for Basic Researches of China (2010CB923404), by NCET-09-0296, the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, and Southeast University.
- 10.Shuai, Y., Zhou, S., Bürger, D., Helm, M., Schmidt, H.: J. Appl. Phys. 109, 124417 (2011) Google Scholar