Room Temperature Multiferroicity in Zn0.98Cu0.02O Film Prepared in N Plasma
Zn0.98Cu0.02O films have been prepared under different conditions by pulsed laser deposition. Ferromagnetism with saturate magnetization of about 7 emu/cm3 at 300 K has been observed in Zn0.98Cu0.02O film prepared in N plasma at room temperature. The concentration of oxygen vacancies was increased by N substituting O in N plasma, and the ferromagnetism originated from the aligned magnetic moments of more Cu ions mediated by oxygen vacancies. Furthermore, ferroelectricity has been confirmed by the observation of the electrical field dependent converse piezoelectric coefficient d 33 loop at room temperature, indicating the potential multiferroic applications.
KeywordsZnO Multiferroicity Diluted magnetic semiconductor Ferromagnetism Ferroelectricity
- 10.Xu, Q.: unpublished Google Scholar