Anomalous Change of Transport Characteristics of Graphite Planar-Type Micro-structures Fabricated by Focused Ion Beam
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We report the observation of an anomalous change of transport characteristics of planar-type microstructures (along ab-plane and c-axis) fabricated on thin graphite layer using a three-dimensional focused-ion-beam (FIB) etching technique. We have fabricated several in-plane area of sizes of 6 μm × 6 μm, 6 μm × 4 μm and 6 μm × 2 μm planar-type microstructures/patterns on thin graphite layer using FIB. The c-axis stack with the height of several nanometers was also fabricated. The transport characteristics were studied for these structures. We have observed a peculiar anomalous transition from ohmic behavior to curve-like nonlinear characteristics below 110 K from current (I)–voltage (V) curves for ab-plane and c-axis stack. Clear nonlinear characteristics have been observed at 25 K. Resistance versus temperature (R–T) and I–V characteristics of the ab-plane and c-axis stack strongly resemble this anomalous-transition behavior. These results show the superiority of graphite-microstructures for future graphite-based nonlinear electronic devices.
KeywordsPlanar-type structures Focused ion beam Anomalous transition Nonlinear characteristics
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