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Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature

  • Asawin Sinsarp
  • Takashi Manago
  • Fumiyoshi Takano
  • Hiro Akinaga
Article

Abstract

We report zero-magnetic-field spin injection from FePt into GaAs at room temperature using FePt/MgO/GaAs-based light-emitting diode heterostructures. Experiments are performed on two samples with different compositions; Fe61Pt39 and Fe57Pt43. The polarizations of injected electrons at 0 T for these two samples are at least 1.5% and 3.3%, respectively. The higher zero-magnetic-field injected spin polarization is considered to be due to the better remanent perpendicular magnetization of the FePt layer in the sample with Fe57Pt43.

Keywords

Spin injection Perpendicular magnetization Tunneling junction FePt MgO 

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Asawin Sinsarp
    • 1
    • 3
  • Takashi Manago
    • 2
  • Fumiyoshi Takano
    • 1
  • Hiro Akinaga
    • 1
  1. 1.Nanotechnology Research Institute (NRI)National Institute of Advanced Industrial Science and Technology (AIST)TsukubaJapan
  2. 2.Department of Electronics and Computer Science, Faculty of Science EngineeringTokyo University of Science, YamaguchiSanyo-OnodaJapan
  3. 3.Department of Physics, Faculty of ScienceMahidol UniversityBangkokThailand

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