Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature
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We report zero-magnetic-field spin injection from FePt into GaAs at room temperature using FePt/MgO/GaAs-based light-emitting diode heterostructures. Experiments are performed on two samples with different compositions; Fe61Pt39 and Fe57Pt43. The polarizations of injected electrons at 0 T for these two samples are at least 1.5% and 3.3%, respectively. The higher zero-magnetic-field injected spin polarization is considered to be due to the better remanent perpendicular magnetization of the FePt layer in the sample with Fe57Pt43.
KeywordsSpin injection Perpendicular magnetization Tunneling junction FePt MgO
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