Abstract
The electronic structure of silicon carbide solid solutions with aluminum has been studied within the limits of a single approximation. The local coherent potential method in terms of multiple scattering theory was used. The electronic spectrum was analyzed in comparison with the experimental X-ray spectra of silicon, aluminum, and carbon. The nature of the observed features of the electronic spectrum is interpreted, and Al-Si covalent binding in solid solutions is found. Formation of vacant states with energies of 1 Ry and decreased forbidden gap in the XANES spectrum at higher aluminum contents in crystal are discussed.
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Yu. A. Vodakov and E. N. Mokhov, Fiz. Tverd. Tela, 41, No. 5, 822–825 (1999).
P. G. Baranov, I. V. Il’in, E. N. Mokhov, and V. A. Khramtsov, ibid., 40, No. 10, 1818–1822 (1998).
Ya. A. Vodakov and E. N. Mokhov, Inst. Phys. Conf. Ser., No. 137, 197 (1994).
E. N. Kalabukhova, S. N. Lukin, Yu. S. Gromovoi, and E. N. Mokhov, Fiz. Tverd. Tela, 40, No. 10, 1824–1827 (1998).
A. A. Lebedev, A. M. Strelchuk, N. S. Savkina, et al., Pisma Zh. Teor. Fiz., 28, No. 23, 78–85 (2002).
V. I. Sokolov, V. V. Makarov, and E. N. Mokhov, Fiz. Tverd. Tela, 11, No. 3, 285/286 (1969).
Yu. S. Krasnov, T. G. Kmita, I. V. Ryzhikov, et al., ibid., 10, No. 4, 1140–1146 (1968).
I. S. Gorban, Yu. A. Marazuev, and Yu. M. Suleimanov, Fiz. Tekh. Poluprovodn., 4, 612–614 (1967).
I. I. Zhukova, V. A. Fomichev, A. S. Vinogradov, and T. M. Zimkina, Fiz. Tverd. Tela, 10, No. 5, 1383–1391 (1968).
V. V. Ilyasov, T. P. Zhdanova, I. Ya. Nikiforov, and A. V. Ilyasov, Zh. Strukt. Khim., 42, No. 1, 120–131 (2001).
V. V. Ilyasov, T. P. Zhdanova, I. Ya. Nikiforov, and A. V. Ilyasov, Phys. Status Solidi (b), 229, No. 3, 1187–1190 (2002).
I. Ya. Nikiforov, V. V. Ilyasov, and N. Yu. Safontseva, J. Phys.: Condens. Matter, 7, 6035–6044 (1995).
V. V. Ilyasov, N. Yu. Safontseva, and I. Ya. Nikiforov, Fiz. Tverd. Tela, 36, No. 2, 451–459 (1994).
M. Rohlfing, P. Kruger, and J. Pollmann, Phys. Rev. B, 48, No. 24, 17791–17799 (1993).
W. V. Haeringen and M. G. Junginger, Solid State Commun., 7, No. 16, 1135–1142 (1969).
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Translated from Zhurnal Strukturnoi Khimii, Vol. 46, No. 5, pp. 830–834, September–October, 2005.
Original Russian Text Copyright © 2005 by V. V. Ilyasov, T. P. Zhdanova, I. Ya. Nikiforov, A. V. Ilyasov, M. M. Olkhovoi, and S. V. Vitkalova
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Ilyasov, V.V., Zhdanova, T.P., Nikiforov, I.Y. et al. Electronic energy structure of AlxSi1−x C wide-gap semiconductor crystals. J Struct Chem 46, 799–804 (2005). https://doi.org/10.1007/s10947-006-0203-1
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DOI: https://doi.org/10.1007/s10947-006-0203-1