Physical and chemical properties of silicon carbonitride nanocrystalline films
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Nanocrystalline transparent films SiCxNy were obtained by plasma-enhanced chemical deposition within the temperature range 473–1173 K from low pressure gas phase from a mixture of hexamethyldisilazane vapor, ammonia, and helium. Physical chemical properties of the films obtained were studied by IR and Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron spectroscopy and synchrotron radiation powder diffaction. Voltage-capacity and voltage-current measurements were also made. The dependence of chemical and phase composition of the films on deposition conditions was determined, and the formation of approximately 2 nm sized spherical nanocrystals within the films was established. The nanocrystals are formed by a phase similar to usual α-Si3N4, with silicon atoms partially substituted by carbon ones.
Keywordssilicon carbonitride thin films nanocrystals chemical and phase composition microstructure
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