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Physical and chemical properties of silicon carbonitride nanocrystalline films

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Abstract

Nanocrystalline transparent films SiCxNy were obtained by plasma-enhanced chemical deposition within the temperature range 473–1173 K from low pressure gas phase from a mixture of hexamethyldisilazane vapor, ammonia, and helium. Physical chemical properties of the films obtained were studied by IR and Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron spectroscopy and synchrotron radiation powder diffaction. Voltage-capacity and voltage-current measurements were also made. The dependence of chemical and phase composition of the films on deposition conditions was determined, and the formation of approximately 2 nm sized spherical nanocrystals within the films was established. The nanocrystals are formed by a phase similar to usual α-Si3N4, with silicon atoms partially substituted by carbon ones.

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Authors and Affiliations

  1. A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk

    N. I. Fainer, M. L. Kosinova, Yu. M. Rumyantsev & F. A. Kuznetsov

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  1. N. I. Fainer
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  2. M. L. Kosinova
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  3. Yu. M. Rumyantsev
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  4. F. A. Kuznetsov
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Original Russian Text Copyright © 2004 by N. I. Fainer, M. L. Kosinova, Yu. M. Rumyantsev, and F. A. Kuznetsov

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Translated from Zhurnal Strukturnoi Khimii, Vol. 45, Supplement, pp. 66–71, 2004.

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Fainer, N.I., Kosinova, M.L., Rumyantsev, Y.M. et al. Physical and chemical properties of silicon carbonitride nanocrystalline films. J Struct Chem 45 (Suppl 1), S65–S70 (2004). https://doi.org/10.1007/s10947-006-0096-z

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  • DOI: https://doi.org/10.1007/s10947-006-0096-z

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