Compact Passively Q-Switched Ho:Sc2SiO5 Microchip Laser with a Few-Layer Molybdenum Disulfide Saturable Absorber

Abstract

We present a passively Q-switched Ho:Sc2SiO5 microchip laser with a molybdenum disulfide saturable absorber for the first time. The molybdenum disulfide materials are fabricated on the end surface of a microchip Ho:SSO crystal. The physical length of the laser cavity is only 3 mm. Three output couplers with different transmissions are utilized to test the passively Q-switched laser performance. The maximum output power is 269.3 mW, under 4.1 W incident power, when the repetition rate is 112.8 kHz, this means that the single pulse energy is 2.39 μJ. The shortest pulsed time duration is 167.4 ns, corresponding to maximum peak power of 14.3 W. The M2 factor of the passively Q-switched microchip Ho:SSO laser is measured to be 1.17.

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Correspondence to Zhongcheng Wang.

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Manuscript submitted by the authors in English on February 19, 2020.

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Liu, X., Wang, Z. & Zhang, J. Compact Passively Q-Switched Ho:Sc2SiO5 Microchip Laser with a Few-Layer Molybdenum Disulfide Saturable Absorber. J Russ Laser Res 41, 225–229 (2020). https://doi.org/10.1007/s10946-020-09868-8

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Keywords

  • passively Q-switch
  • MoS2
  • Ho:Sc2SiO5(SSO) crystal
  • microchip