Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature In x Ga1−x N quantum-dot lasers
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We analyze the effect of the lattice constant on the band-gap energy of In x Ga1−x N and optimize the structure of the device with a separate-confinement heterostructure. To vary the lattice constants, we change the In molar fraction, which permits us to investigate a wide range of the band gap of the active material employed in diode lasers. In x Ga1−x N is a promising active material for high-performance 1.55 μm quantum-dot lasers due to its excellent band-gap-energy stability with respect to temperature variations. The band gap of In x Ga1−x N decreases from 3.4 to 0.7 eV, and the necessary band gap can be achieved by changing the lattice parameters depending on the device application. It has been found that In0.86Ga0.14N can be a promising material for emitting light at a wavelength of 1.55 μm.
Keywordsquantum dot lattice constant band gap InGaN molar fraction temperature stability
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- 3.Y. Arakawa, T. Someya and K. Tachibana, “Growth and physics of nitride-based quantum dots for optoelectronics applications,” in: International Workshop on Nitride Semiconductors (Nagoya, Japan, 2000), IPAP Conf. Series (2000), Vol. 1, p. 403.Google Scholar