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Operation of a Latching, Low-Loss, Wideband Microwave Phase-Change Switch Below 1 K

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Abstract

We report on the design, fabrication, and demonstration of the operation of a latching (nonvolatile) low-loss microwave switch at 4.2 K and 40 mK using the phase-change material germanium telluride (GeTe) as the switching element. The single-pole double-throw (SPDT) series–shunt switch has a single RF input and two selectable RF outputs. An insertion loss of less than 1 dB from DC to 10 GHz was demonstrated, with virtually identical performance across 5000 switching cycles at 40 mK. We have also characterized the resistance of the GeTe thin-film material used in the fabrication of the SPDT switch from room temperature down to 11 mK. While bulk GeTe is known to become superconducting below 1 K, these GeTe films showed no detectable superconducting transition, resulting in a switch with finite on-state DC resistance. Given the wide range of phase-change material candidates reported in the literature and prior evidence of superconductivity, this demonstration paves the way for future development of a near-ideal switch which could have zero on-state DC resistance at cryogenic temperatures.

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Acknowledgements

This research was developed with funding from the Defense Advanced Research Projects Agency (DARPA). The views, opinions, and/or findings expressed are those of the author and should not be interpreted as representing the official views or policies of the Department of Defense or the US Government.

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Author notes

  1. N. El-Hinnawy

    Present address: TowerJazz, Newport Beach, CA, 92660, USA

  2. M. R. King

    Present address: Wolfspeed, Research Triangle Park, Durham, NC, 27709, USA

  3. C. R. Padilla

    Present address: Akoustis Technologies, Canandaigua, NY, 14424, USA

Authors and Affiliations

  1. Northrop Grumman Mission Systems, Advanced Technology Laboratory, 1212 Winterson Road, Linthicum, MD, 21090, USA

    P. Borodulin, N. El-Hinnawy, A. L. Graninger, M. R. King, C. R. Padilla, L. N. Upton, R. T. Hinkey, A. A. Pesetski, M. E. Sherwin & R. M. Young

  2. Johns Hopkins University, Baltimore, MD, 21218, USA

    P. Borodulin & T. E. Schlesinger

  3. Carnegie Mellon University, Pittsburgh, PA, 15232, USA

    N. El-Hinnawy

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Borodulin, P., El-Hinnawy, N., Graninger, A.L. et al. Operation of a Latching, Low-Loss, Wideband Microwave Phase-Change Switch Below 1 K. J Low Temp Phys 194, 273–284 (2019). https://doi.org/10.1007/s10909-018-2096-8

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