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Spin–Flip Relaxation Between the Landau Levels in Gapped Graphene

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Abstract

Within the frame of the Huang–Rhys’s lattice relaxation model, we theoretically investigate the spin–flip relaxation assisted by two-phonon processes between the zeroth and first-excited Landau level in gapped graphene on different polar substrates. We give the comparisons between the spin-conserving and the spin–flip of two-phonon processes, which are composed of the surface-optical phonons and longitudinal acoustic phonons. The dependences of two-phonon processes on the energy separation, temperature and polarizability of substrates are discussed. Moreover, we find that the relaxation time of spin–flip can be tuned on a large scale by adjusting the Rashba spin–orbital coupling and internal distance between the graphene and the polar substrate.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (No. 11674241).

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Authors and Affiliations

  1. Department of Basic Courses, Tianjin Sino-German University of Applied Sciences, Tianjin, 300350, People’s Republic of China

    Wei-Ping Li

  2. Department of Physics and Electronic Informational Engineering, Chifeng University, Chifeng Inner Mongolia, 024000, People’s Republic of China

    Ji-Wen Yin

  3. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin, 300354, China

    Zi-Wu Wang

Authors
  1. Wei-Ping Li
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  2. Ji-Wen Yin
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Correspondence to Zi-Wu Wang.

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Li, WP., Yin, JW. & Wang, ZW. Spin–Flip Relaxation Between the Landau Levels in Gapped Graphene. J Low Temp Phys 194, 224–234 (2019). https://doi.org/10.1007/s10909-018-2091-0

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  • DOI: https://doi.org/10.1007/s10909-018-2091-0

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