Impurity, LO Phonon and Thickness Effects on the Transition of an Electron in a Gaussian Confinement Potential DQD with a Magnetic Field

Abstract

We chose the harmonic potential and Gaussian potential to describe the electronic transverse and longitudinal confinement potential in the disk quantum dot (QD) with the hydrogen-like impurity and the thickness effect, respectively, and the eigenvalues and eigenfunctions of the ground and first exited states of the electron are derived by means of the Lee–Low–Pines–Pekar variational method. On this basis, a two-level system was formed, and the electron quantum transition affected by a magnetic field is discussed in terms of the two-level system theory. The results indicate the Gaussian confinement potential reflects the real confinement potential more accurately than the parabolic one; the influence of the thickness of the QD on the electron quantum transition is interesting and significant and cannot be ignored; the electron transition probability $Q$ is influenced significantly by some physical quantities, such as the strength of the electron–phonon coupling $\alpha$, the magnetic-field cyclotron frequency $\omega_{\text{c}}$, the barrier height $V_{0}$ and confinement range $L$ of the Gaussian confinement potential. The corresponding results will be helpful to explore the pathway and method to manipulate the transport and optical properties of the QD.