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Journal of Low Temperature Physics

, Volume 167, Issue 5–6, pp 1149–1153 | Cite as

Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures

  • J. Domange
  • E. Olivieri
  • A. Broniatowski
Article

Abstract

The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures are determined as a function of the electric field in the 〈001〉 orientation, based on time-of-flight measurements in cryogenic coplanar grid Ge detectors. Results obtained in two n-type crystals (|N a N d |<1010 cm−3 and doped to 1011 cm−3) are compared with the experimental data from previous investigations, and shown to be consistent with Monte-Carlo simulations of carrier transport.

Keywords

Dark matter search Germanium cryogenic detectors Time-of-flight measurements Hot carriers transport 

Notes

Acknowledgement

This study has been supported in part by Agence Nationale pour la Recherche under contract ANR-2010-BLAN-0422 02.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Centre de Spectroscopie Nucléaire et de Spectroscopie de MasseCNRS/IN2P3, and Université Paris Sud XIOrsay CedexFrance
  2. 2.Service de Physique des ParticulesCEA/DSM/IRFUGif-sur-YvetteFrance

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