One Step Synthesis of Nitrogen-Doped Graphene from Naphthalene and Urea by Atmospheric Chemical Vapor Deposition
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Heavy metal pollutants in wastewater are a major environmental concern. In order to fabricate metal organic composite for adsorption of these pollutants, in a first step a pristine and several nitrogen doped graphene films were synthesized by chemical vapor deposition method. Preparation of graphene films was performed through a one-step co-growth of naphthalene and urea mixture as an inexpensive and easy technique to handle solid precursors. This was done over a copper catalyst at different growth temperatures. Different characterization methods including Raman spectroscopy, elemental analysis, and X-ray diffraction confirmed the quality of the pristine and doped graphene. This technique showed an increasing trend of the doping level (nitrogen concentration up to 5.1% overall) as the growth temperature decreased. Results showed that both nitrogen doping, and carrying the synthesis at higher temperatures increase the defects and wrinkles in the graphene. Furthermore, doping introduced a light shift in defect types from vacancy in pristine graphene to boundary type in nitrogen-doped samples, which are favorable for functionalization for environmental applications.
KeywordsNitrogen-doped graphene Layered compounds Nano structures Chemical vapor deposition MOF Heavy metal removal
The financial support for this research by Research Institute of Petroleum Industry (RIPI), Graduate office of Isfahan University of Technology, and Iran Nanotechnology Initiative Council is greatly appreciated.
Compliance with Ethical Standards
Conflict of interest
The authors declare that they have no conflicts of interest.
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